Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodes

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242764

A. Hori, D. Yasunaga, K. Fujiwara

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Abstract

Tmprahre injecrion cumem dependence of elecmluminescence (EL) spechal inteusiw ofthe blue InGaN single q.tanfwn well (SQW) light mining diodes w . k ) with high recombination eficiemy has been sfdied over a wide /empenhire range (T = 15.300 K ) ond us function o/ i@e&m mar (0.1-IOmA). Itis fowulrhat, when TissIight[ydecreasedro 180KKfmm300K the EL inreus@ eficient!~ inoemer due to the improd qwntum H o w , with j d e r decrease of T beluw 100 K the EL e f i i m q h k t i cn l l y reduced at all he injection nurent levelr due fo duced c a " captuve and population. n~ir EL redwtion involwr disapp-ance of injection w e n t depdent line shape changes (blue sh@) mused by bandfilling of the localized recombinolion centem appeamnCe of the GaN emirsion at 3. I e?' obsmed belav 100 K sugperLF that caniers are not ejjixtivefly m p w e d andpopuhted in the blue SQW &er, but @-&red to non-r&tive centers within GUN clad lqers. There rad& indicae thar the more @cienr " e r capwe by SQW rather rhan Ly he non-mdiarrve reconibination caters in the clod &rs is uucio[ lo a h m e the radiaive mcomblwtion at 160-300 K

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蓝色InGaN单量子阱发光二极管中电注入载流子的竞争捕获和逃逸过程

蓝色InGaN单量子阱(SQW)光挖掘二极管的发光(EL)光谱注入对激光注入量的依赖。k)具有较高的复合效率，在宽/覆盖范围(T = 15.300 k)和函数o/ i@e和mar (0.1-IOmA)上进行了研究。值得注意的是，当TissIight[x]减小到180KKfmm300K时，EL的效率提高了!当温度低于100 K时，由于捕获量和种群数量的减少，在所有注入电流水平下，由于捕获量和种群数量的减少，其EL值都降低了。n~ir EL还原涉及到注射w的消失，以及通过局部重组中心的带状填充引起的线形变化(蓝色sh@)。e ?“令人困惑的是，100万英尺高的建筑并不是在蓝色的SQW区域内建造的，而是在GUN覆盖层内的非创新中心建造的。结果表明，在160 ~ 300 K时，由SQW而不是由qw捕获的非热相结合物在云团中所占的比例比辐射溶解度高

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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