快速重离子辐照4H-SiC的电学研究

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242735

E. Kalinina, G. Onushkin, D. Davidov, A. Hallén, A. Konstantinov, V. Skuratov, J. Staňo

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引用次数: 5

摘要

利用深能级瞬态光谱(DLTS)和电阻率测量研究了245mev氪轰击4H-SiC外延层的辐射缺陷和电学性能。电容、电流和电荷dlts光谱显示，主要存在与电子、中子或光离子相似的Z/sub 1/ (0.66 eV)深能级。肖特基势垒电阻率的温度依赖性表现为两个阶段，这两个阶段在碳化硅的常规辐照中是没有观察到的。

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Electrical study of 4H-SiC irradiated with swift heavy ions

Radiation defects and electrical properties in 4H-SiC epitaxial layer bombarded with 245 MeV Kr ions were studied by deep level transient spectroscopy (DLTS) and electrical resistivity measurements. Capacitance-, current- and charge-DLTS spectra show the presence mainly of Z/sub 1/ (0.66 eV) deep levels similar to those obtained for electrons, neutrons or light ions. The temperature dependence of electrical resistivity of Schottky barriers is characterized by two stages not observed previously in silicon carbide for conventional type of irradiation.

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来源期刊

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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