iii族氮基量子阱的光学性质

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242761

P. Lefebvre

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引用次数: 0

摘要

基于六方族氮化物的量子阱具有许多原始性质。特别是，沿着生长轴存在内部电偶极，每几毫伏/厘米。通过对一系列样品的时间分辨光致发光实验，分析了这两种新型纳米物体中电子-空穴对的辐射重组和辐射重组之间的关系。揭示了电场和载流子定位对GaN/GaN量子阱光学特性的影响。光致发光时间衰减的标度效应以及声子和电子空穴对之间的巨大耦合现象，可以用光学共振机制的原始和有效描述来解释。

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Optical properties of group-III nitride based quantum wells

Quantum wells based on hexagonal group-IN nitrides have numerous original properties. III particular, inrernnl electric Jklds are present along rhe growrh axis, r-eoching several MV/cm. The coniperifion between radiorive and nowadiative recombinations ofelectron-hole pairs in rhese novel nano-objecrs is analysed by nrensuriizg rhe rime-resolvedphotoluminesceIice of series of samples. The respective influences of electric fields and localisatioii of carriers, on the opricalproperries oflnGaN/GaN quantum wells, are unravelled. The scaling luw obsefved fbphofoluminescence rime decays arid the giant coiipling behveen LOphonons arid elecrron-hole pairs alp interpreted in terms of an original and efticieiit description o/the mechanisms involved in optical reronibinations.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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