GeSi块状晶体的生长和基本性质

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242731

I. Yonenaga

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引用次数: 0

摘要

在本文中，我们尝试了在0 < x <1的组成范围内生长大尺寸GeSi块状晶体，并成功地在0 < x < 0.85 < x <1的组成范围内生长了大尺寸GeSi合金的完整单晶。本文报道了GeSi合金体晶生长及其合金化带来的基本性能的最新研究结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Growth and fundamental properties of GeSi bulk crystals

In this paper, we attempted the Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0 < x <1and succeeded in growing full single crystals of GeSi alloys of large size within the composition ranges of 0 < x < 0.85 < x < 1 . This paper reports the current results on bulk crystal growth of GeSi alloys and on their fundamental properties that are brought about by alloying.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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