垂直梯度冻结法生长InP衬底晶体

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242716

U. Sahr, G. Muller

{"title":"垂直梯度冻结法生长InP衬底晶体","authors":"U. Sahr, G. Muller","doi":"10.1109/SIM.2002.1242716","DOIUrl":null,"url":null,"abstract":"InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6\" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Growth of InP substrate crystals by the vertical gradient freeze technique\",\"authors\":\"U. Sahr, G. Muller\",\"doi\":\"10.1109/SIM.2002.1242716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6\\\" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.\",\"PeriodicalId\":109480,\"journal\":{\"name\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.2002.1242716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

用不同的方法生长InP衬底晶体。vgf技术为生产高质量晶体提供了最佳条件。80年代首次用vgf技术生长出了inp晶体。今天，vgf技术是一种商业工艺，直径达6英寸的半绝缘基板是可用的。在埃尔兰根晶体生长实验室，研究了InP的vgf生长。利用计算机模拟技术开发了vgf生长装置。生长的晶体具有低位错密度和高均匀性。

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Growth of InP substrate crystals by the vertical gradient freeze technique

InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.

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来源期刊

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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