Optical and structural characterisation of CdTe crystals grown by physical vapour transport and Bridgman methods

N. Armani, C. Ferrari, G. Salviati, F. Bissoli, M. Zha, A. Zappettini, L. Zanotti
{"title":"Optical and structural characterisation of CdTe crystals grown by physical vapour transport and Bridgman methods","authors":"N. Armani, C. Ferrari, G. Salviati, F. Bissoli, M. Zha, A. Zappettini, L. Zanotti","doi":"10.1109/SIM.2002.1242732","DOIUrl":null,"url":null,"abstract":"The structural and optical properties of cadmium telluride crystals have been studied by means of X-ray diffraction and SEM-cathodoluminescence techniques. CdTe crystals were grown from the melt by a modified vertical Bridgman method and by physical vapour transport, from a 7N source material and without incorporation of any doping elements. The high resistivity required for the technological applications of this material was obtained only by controlling the stoichiometric ratio between Cd and Te. The crystalline quality of the samples was first checked from the FWHM of the high-resolution X-ray rocking curves. The X-ray topographies reveal an increasing defects density in the low resistivity crystals in addition to the presence of a large number of low angle grain boundaries. The low temperature luminescence spectra show the same emission bands for all the crystals studied except for the 1.4 eV band absent in the p-type Bridgman grown samples.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The structural and optical properties of cadmium telluride crystals have been studied by means of X-ray diffraction and SEM-cathodoluminescence techniques. CdTe crystals were grown from the melt by a modified vertical Bridgman method and by physical vapour transport, from a 7N source material and without incorporation of any doping elements. The high resistivity required for the technological applications of this material was obtained only by controlling the stoichiometric ratio between Cd and Te. The crystalline quality of the samples was first checked from the FWHM of the high-resolution X-ray rocking curves. The X-ray topographies reveal an increasing defects density in the low resistivity crystals in addition to the presence of a large number of low angle grain boundaries. The low temperature luminescence spectra show the same emission bands for all the crystals studied except for the 1.4 eV band absent in the p-type Bridgman grown samples.
用物理蒸汽输运和Bridgman方法生长的碲化镉晶体的光学和结构表征
利用x射线衍射和扫描电镜阴极发光技术研究了碲化镉晶体的结构和光学性质。通过改进的垂直Bridgman方法和物理蒸汽传输,从7N源材料中生长出CdTe晶体,并且没有掺入任何掺杂元素。只有通过控制Cd和Te之间的化学计量比,才能获得该材料技术应用所需的高电阻率。样品的结晶质量首先通过高分辨率x射线摇摆曲线的FWHM进行检验。x射线形貌显示,在低电阻率晶体中,除了存在大量的低角度晶界外,缺陷密度增加。低温发光光谱显示,除了p型Bridgman生长样品中不存在1.4 eV波段外,所有晶体都具有相同的发射带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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