半绝缘名义未掺杂碲化镉晶体的发光特性

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242736

A. Zappettini, V. Corregidor, E. Dieguez, M. Zha, F. Bissoli, L. Zanotti

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引用次数: 1

摘要

采用气相法和Bridgman法制备了高纯度、可控化学计量的CdTe晶体。得到了名义上未掺杂的高电阻率晶体。为了研究晶体的补偿机制，进行了详细的光致发光(PL)分析。在1.588 eV处，PL光谱以束缚受体激子线为主，呈现“p”型特征。可能由于III族杂质，也存在1.583 eV的谱线。一周1.4 eV波段也被发现。

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Luminescence properties of semi-insulating nominally-undoped CdTe crystals

CdTe crystals were grown by the vapour phase and by Bridgman method by using high purity and stoichiometry controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a "p" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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