GaAs for X-imaging and particle detectors

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242721

A.I. Ayzenshtat, D. Budnitsky, O. B. Koretskaya, L. Okaevich, V. A. Novikov, A. I. Potapov, O. Tolbanov, A. Tyazhev, A. Vorobiev

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Abstract

Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors based on SI-GaAs are presented.

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用于x成像和粒子探测器的砷化镓

在离子化辐射探测器的半导体材料中，砷化镓具有载流子迁移率高、带隙宽、密度高等优点，具有广阔的应用前景。本文对不同工艺方法制备的砷化镓半绝缘层(SI-GaAs)的物理和电气特性进行了比较分析。介绍了探测器结构和基于SI-GaAs的多元素探测器的主要参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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