用于半导体晶圆表征的先进x射线成像技术

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242745

T. Baumbach, P. Mikulík, D. Korytár, P. Pernot, D. Lubbert, L. Helfen, M. Herms, C. Landesberger

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引用次数: 0

摘要

使用同步辐射的高质量x射线成像允许半导体晶圆表征，分辨率低至微米。我们报告了用于检测超薄晶圆磨削产生的表面损伤及其在后续工艺步骤中去除的x射线形貌和mea - dzrcrmetp的结果。我们提出了一种用于GaAs宏观缺陷和超薄硅片粘接后变形场的晶格变形和微米分辨倾斜扭曲拖把定量成像方法。

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Advanced X-ray imaging techniques for semiconductor wafer characterisation

High-quality X-ray imaging by use of synchrotron radiation permits semiconductor wafer characterisation with down to micrometer resolution. We report results of X-ray topography and mea dzrracrometp for the detection of surface damage generated by grinding of ultra-thin wafers and its removal in subsequent technological steps. We present a method of quantitative imaging of lattice deformations and micrometer resolved tiltand twist mops applied to macro-defects in GaAs and deformationfields after gluing ofultra-thin wafers.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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