Advanced X-ray imaging techniques for semiconductor wafer characterisation

Abstract

High-quality X-ray imaging by use of synchrotron radiation permits semiconductor wafer characterisation with down to micrometer resolution. We report results of X-ray topography and mea dzrracrometp for the detection of surface damage generated by grinding of ultra-thin wafers and its removal in subsequent technological steps. We present a method of quantitative imaging of lattice deformations and micrometer resolved tiltand twist mops applied to macro-defects in GaAs and deformationfields after gluing ofultra-thin wafers.