A.I. Ayzenshtat, D. Budnitsky, O. B. Koretskaya, L. Okaevich, V. A. Novikov, A. I. Potapov, O. Tolbanov, A. Tyazhev, A. Vorobiev
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Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors based on SI-GaAs are presented.
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