用时间分辨四波混频技术分析半绝缘晶体的深阱控制载流子动力学

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242747

K. Jarašiūnas, M. Sūdžius, R. Aleksieju̅nas

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引用次数: 0

摘要

我们演示了非线性四波混频(FWM)技术在研究深杂质控制载流子生成中的多种应用。利用亚纳秒动态监测自由载流子光栅的光衍射传输和复合。对半绝缘CdTe: K、CdTetCe和GaAs:EL2中输运产生的空间电荷场对载流子动力学的影响进行了数值分析和实验研究。我们提出了一种新的方法来确定深掺杂和浅掺杂的光折变晶体的导电类型。将FWM技术扩展到监测300 K下GaAs中EL2的瞬态光猝灭，控制深阱补偿比。绘制了GaAs w+-s中缺陷的空间分布图，并研究了位错附近的超快复合。

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Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique

We demonstrate versatile applications of a nonlinear, four wave mixing (FWM) technique to study deep-impurity governed carrier generation. transport and recombination by monitoring subnanosecond dynamics of light difraction onfree carrier grating. Role of transport-created space chargefield to carrier dynamics is analyzed numerically and studied experimentally in semi-insulating CdTe: K CdTetCe, and GaAs:EL2. We present a novel way to determine the conductivi@ type of a photorefractive cryrtal doped by deep and codoped by shallow impurities. FWM technique is extended to monitor transient photoquenching of EL2 in GaAs at 300 K, control the compensation ratio of deep trap. map the spatial distribution of defects in GaAs w+-s , and study ultrafast recombination in vicinity ofdislocotions.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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