电子用LT (Al)GaAs和Al(Ga)As/AlAsSb氧化物

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242738

J. Champlain, C. Zheng, U. Mishra

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引用次数: 0

摘要

介绍了对III-V电子学各个领域的研究。用LT Al/sub x/Ga/sub 1-x/As钝化的GaAs mesfet击穿电压(V/sub bkd/=43V)高于标准器件(V/sub bkd/=8V)。使用绝缘氧化物缓冲器(gaas - on -绝缘体)制造的mesfet和phemt产生了世界纪录的功率增加效率(PAE=88%)。近年来，为了获得高增益、高速度的性能，研究方向是具有氧化物电流约束层的集电极。

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LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications

Research into various areas of III-V electronics is presented. GaAs MESFETs passivated with LT Al/sub x/Ga/sub 1-x/As showed increased breakdown voltages (V/sub bkd/=43V) over standard devices (V/sub bkd/=8V). MESFETs and pHEMTs fabricated with insulating oxide buffers (GaAs-On-lnsulator) produced world record power-added efficiencies (PAE=88%). Recently, research has been oriented towards collector-up with oxide current confinement layers for high gain, high speed performance.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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