{"title":"Electron beam fabricated IGFETs","authors":"B. El-Kareh, R. Leone, C. Ting","doi":"10.1109/IEDM.1976.189079","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189079","url":null,"abstract":"One of the concerns with electron beam pattern definition of IGFETs is the effect of radiation on transfer characteristics. Several types of devices with different gate structures have been fabricated using electron beam lithography. A description of the structures is presented with emphasis on horizontal geometries. The critical device parameters are then discussed and compared with those of IGFETs fabricated with conventional photolithography, and also with conventional devices subjected to electron radiation. Device characteristics are shown after several annealing conditions. It is found that radiation effects can be removed totally on MOS structures; however, residual effects are observed on MNOS and SNOS devices having vertical structures as described. A model for radiation effects and annealing behavior is presented.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127488933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Surface characterization of ion-implanted Si-SiO2structures","authors":"P. V. Gray, K. Wang","doi":"10.1109/IEDM.1976.189052","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189052","url":null,"abstract":"This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132960095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Phenomena useful for displays","authors":"J. Pankove","doi":"10.1109/IEDM.1976.189120","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189120","url":null,"abstract":"This review considers various mechanisms which either generate or modulate light: injection luminescence, impact excited electro- and cathodo- luminescences, glow discharge, liquid crystals, electrophoresis, plating, electrochromism.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CMOS process for high-performance analog LSI","authors":"W. Black, R. McCharles, D. Hodges","doi":"10.1109/IEDM.1976.189050","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189050","url":null,"abstract":"A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129227626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Schottky diode magnetic sensor of high sensitiveness","authors":"G. Kamarinos, P. Viktorovitch","doi":"10.1109/IEDM.1976.189036","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189036","url":null,"abstract":"A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125366401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A high-power light-activated thyristor","authors":"E. Schlegel, D. Page","doi":"10.1109/IEDM.1976.189088","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189088","url":null,"abstract":"A 2000V, 800A light-activated thyristor, suitable for use in high power circuitry of the type required by the electric utility industry is described. Unlike a conventional thyristor which is turned on by an electrical signal to the gate electrode, this device is turned on by an optical pulse, from a solid state light-source, that is conveyed to the silicon device via a light pipe. The key design objectives were to create a device structure capable of being fired by a low energy light pulse in a reliable manner, while maintaining a short and uniform delay time and a dV/dt rating in excess of 300V/µsec. A design approach is described that has resulted in a better understanding of the physics of firing a high power thyristor with a small light energy. Considered are gate amplification, the area of illuminated silicon, the duration of the light pulse and the conductivity type and the surface preparation of the light sensitive area. Evaluation data shows that a light pulse with only 0.3 µJ of energy can be used to fire the thyristor, reliably and with low switching loss, with uniform delay times of < 1 µsec and turn-on times of < 3.5 µsec. A quantity of these devices is being produced for use in an experimental power electronics system.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125431070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2 kw, 250 MHz Bandwidth, Ku-BAND klystron amplifier","authors":"M. Levin","doi":"10.1109/IEDM.1976.189065","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189065","url":null,"abstract":"The Varian VKU-7812 six-cavity klystron amplifier produces 2 kW of communications quality cw power at 20 percent efficiency with 30 dB gain over 250 MHz 1 dB bandwidth within the 14.0 to 14.5 GHz frequency band. This compact new tube employs permanent-magnet focusing and is entirely air cooled. The double-tuned, filter-loaded output circuit provides an interaction impedance of five to six thousand ohms over the bandpass. The microperveance 1.25, convergence 50 electron gun produces a high quality 0.03 inch diameter beam which is confined within the 0.05 inch tunnel by a pair of samarium cobalt radially magnetized magnets producing a main field of 5 kg. Intercavity drift lengths, R/Q and driver cavity loading were computer optimized for gain, bandwidth and efficiency with minimum magnet size, while also eliminating gain cancellations.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122514473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advances in 2-5 micrometer (Hg, Cd)Te photodiodes","authors":"T. Tredwell","doi":"10.1109/IEDM.1976.189102","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189102","url":null,"abstract":"Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 300K and D* = 5.0 × 10<sup>12</sup>cm Hz<sup>1/2</sup>/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 10<sup>12</sup>Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10<sup>-8</sup>sec. 2.7µm photodiodes achieve D*<inf>λ</inf>= 1.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 300K and D*<inf>λ</inf>= 5.0 × 10<sup>11</sup>cm Hz<sup>1/2</sup>/W at 193K. 4.8µm photodiodes achieve D*<inf>λ</inf>= 8.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 170K and 2.0 × 10<sup>12</sup>cm Hz<sup>1/2</sup>/W at 77K and zero background. This paper will present these recent data and compare them with theory.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133210946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Physics of and models for I2L","authors":"F. Klaassen","doi":"10.1109/IEDM.1976.189042","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189042","url":null,"abstract":"Device physics for modelling an I<sup>2</sup>L gate is discussed. The closest possible relation of the device properties to technology, design and measuring practice has been sought. A standard I<sup>2</sup>L gate and other versions like oxide-isolated I<sup>2</sup>L, SFL and Schottky-I<sup>2</sup>L are considered.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124826333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Narrow channel effects in insulated gate field effect transistors","authors":"W. Noble, P. Cottrell","doi":"10.1109/IEDM.1976.189112","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189112","url":null,"abstract":"A numerical two dimmensional simulation has been used to demonstrate the effect of IGFET channel width on threshold voltage. The computed results agree well with experiments and are used to build an understanding of the mechanism. Potential, field and carrier concentration distributions are used to provide a picture of the geometric interactions.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132031927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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