绝缘栅场效应晶体管中的窄沟道效应

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1976.189112

W. Noble, P. Cottrell

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引用次数: 23

摘要

采用二维数值模拟方法研究了IGFET通道宽度对阈值电压的影响。计算结果与实验结果吻合较好，并用于建立对机理的理解。势、场和载流子浓度分布被用来提供几何相互作用的图像。

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Narrow channel effects in insulated gate field effect transistors

A numerical two dimmensional simulation has been used to demonstrate the effect of IGFET channel width on threshold voltage. The computed results agree well with experiments and are used to build an understanding of the mechanism. Potential, field and carrier concentration distributions are used to provide a picture of the geometric interactions.

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来源期刊

1976 International Electron Devices Meeting

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