{"title":"Anomalous current distributions in power transistors","authors":"G. Bosch","doi":"10.1016/0038-1101(77)90104-6","DOIUrl":"https://doi.org/10.1016/0038-1101(77)90104-6","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"118543094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electron optics of the electron-beam lithography system, EL1","authors":"J. Mauer, H. C. Pfeiffer, W. Stickel","doi":"10.1109/IEDM.1976.189076","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189076","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124286942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The design of optimum high radiance double heterojunction (Al,Ga)As LED's for fiber-optical communication systems","authors":"J. Zucker, R. Lauer","doi":"10.1109/IEDM.1976.189125","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189125","url":null,"abstract":"The differential equation for current flow in an etched-well type LED is solved. This solution leads to design criteria for the optimization of these devices. These criteria are that the sheet resistance of the p-layers be as large as possible (for a p-type active layer), the sheet resistance of the n-layer be as small as possible, and the ratio of contact diameter to well diameter be as large as possible. Measurements of optical power coupled into a fiber are in excellent agreement with predictions of the model assuming unity internal quantum efficiency.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126747272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"InSb CID infrared imaging devices","authors":"J.C. Kim, W. Davern, D. Colangelo","doi":"10.1109/IEDM.1976.189104","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189104","url":null,"abstract":"The development of the InSb MIS technology and associated CID imaging arrays has progressed rapidly. At present, high-sensitivity line arrays and operating two-dimensional arrays have been fabricated. Photon-noise-limited performance has been achieved in line arrays, all the noise sources of the device have been identified and modeled, and the results compare favorably with the theoretical values. For background photon flux levels higher than mid-1012photons/sec-cm2, the device performance is practically background limited (BLIP). In the lower background region at 77°K, however, the shot noise associated with the thermally generated dark current limits device sensitivity.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117250186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Jacobson, J. Grinberg, W. Bleha, J. Margerum, L. Miller, L. Fraas
{"title":"The liquid crystal light valve—A new display device","authors":"A. Jacobson, J. Grinberg, W. Bleha, J. Margerum, L. Miller, L. Fraas","doi":"10.1109/IEDM.1976.189121","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189121","url":null,"abstract":"The liquid crystal light valve (LCLV) is a photoactivated electro-optic device that is designed to transfer images from one beam of light to another. It is being developed primarily for application to large screen video display of both alpha numeric/graphic and pictorial television imagery. However, it is also useful in the conversion of images from non-coherent to spatially coherent light, and from visible to IR light. Basically the device consists of a glass substrate upon which is deposited thin films of indium-tin oxide, a CdS photo-sensor, a CdTe light-absorbing layer, and a dielectric mirror. A second glass substrate is coated with a thin film indium-tin oxide transparent electrode. The two substrates sandwich between them a thin layer of an appropriate nematic liquid crystal. The resulting device has several important features. It has high input sensitivity (<100 µW/cm2at 525 nm), high resolution (>1500 lines/inch at 50 percent MTF), high contrast (>100:1), television-compatible speed (30 frames/sec.). Moreover, it is capable of very substantial image intensification (>105). Devices having apertures of two inches are fabricated routinely on fiber optics substrates. These devises can then be coupled directly to a 2- inch diameter fiber optics faceplate CRT primary (input) display to constitute a compact device package. In this talk we will describe the basic light valve device, discuss the various liquid crystal electro-optic effects that we use in these devices and characterize the performance that we obtain from them.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124566629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Theory of solar cells incorporating impurity gradients","authors":"J. Hauser","doi":"10.1109/IEDM.1976.188986","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188986","url":null,"abstract":"This paper discusses the theory of solar cells incorporating impurity gradients as a potential means of improving the efficiency. Both abrupt changes in doping as at high-low junctions and gradual changes resulting in drift fields have been considered. The advantages of high-low junctions have been demonstrated both theoretically and experimentally for silicon cells where the minority carrier diffusion length is larger than the cell thickness. Predicted advantages of other drift fields have not been clearly demonstrated. It appears that the advantages of drift fields throughout the device in enhanced carrier collection efficiency are largely offset by reduced open circuit voltages and/or reduced curve factors.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124657001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An improved theory of the silicon p-n junction solar cell","authors":"E. Rittner","doi":"10.1109/IEDM.1976.188987","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188987","url":null,"abstract":"The classical diffusion theory of the silicon p-n junction solar cell is modified to include the junction generation-recombination current enhanced by field lowering of the thermal bandgap. The method of calculating the short-circuit current from the solar spectrum and the bandgap is refined so as to include optical and electrical losses in the cell. The modified theory explains a wide body of data on three generations of silicon solar cells and removes the previous dilemma of the fall-off in open-circuit voltage and efficiency with increasing doping. Finally, it teaches optimum choices for substrate thickness and doping, and sets goals for future high efficiency cells.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130390375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An 82 to 84 percent efficient, small size, 2 and 4 stage depressed collector for octave bandwidth high performance TWT's","authors":"H. Kosmahl, P. Ramins","doi":"10.1109/IEDM.1976.189098","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189098","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116214044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Relationships between residual defects and excess noise in ion-implanted MOSFETs","authors":"K. Wang","doi":"10.1109/IEDM.1976.189051","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189051","url":null,"abstract":"This paper describes the relationship between excess noise and residual defects of extremely low concentration (<1 × 10<sup>9</sup>cm<sup>-2</sup>)in ion-implanted MOSFETS. The excess (1/f) noise was measured as a function of the drain current. The activation energy and the density of the residual defects after high temperature annealing was measured using a transient capacitance technique. Test FETs were ion-implanted with a fluence of 5 × 10<sup>11</sup>∼ 4 × 10<sup>12</sup>using<sup>31</sup>p<sup>+</sup>,<sup>11</sup>B<sup>+</sup>, or<sup>28</sup>Si<sup>+</sup>species. Post implant anneal was carried out in N<inf>2</inf>ambient for 20 minutes at various temperatures. For<sup>11</sup>B<sup>+</sup>-implanted MOSFETs a high residual defect concentration after annealing above 920° was observed near the band edges whereas the density of defects as a result of<sup>28</sup>Si<sup>+</sup>or<sup>31</sup>p<sup>+</sup>implantation after annealing was equal to that of control MOSFETs.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116329654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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