用于光纤通信系统的最佳高亮度双异质结(Al,Ga)As LED的设计

J. Zucker, R. Lauer
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引用次数: 1

摘要

求解了蚀刻井型LED内电流的微分方程。该解决方案为这些设备的优化提供了设计标准。这些准则是p层的片电阻尽可能大(对于p型有源层),n层的片电阻尽可能小,接触直径与井径的比值尽可能大。耦合到光纤中的光功率的测量与假设内部量子效率统一的模型的预测非常一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The design of optimum high radiance double heterojunction (Al,Ga)As LED's for fiber-optical communication systems
The differential equation for current flow in an etched-well type LED is solved. This solution leads to design criteria for the optimization of these devices. These criteria are that the sheet resistance of the p-layers be as large as possible (for a p-type active layer), the sheet resistance of the n-layer be as small as possible, and the ratio of contact diameter to well diameter be as large as possible. Measurements of optical power coupled into a fiber are in excellent agreement with predictions of the model assuming unity internal quantum efficiency.
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