{"title":"InSb CID红外成像装置","authors":"J.C. Kim, W. Davern, D. Colangelo","doi":"10.1109/IEDM.1976.189104","DOIUrl":null,"url":null,"abstract":"The development of the InSb MIS technology and associated CID imaging arrays has progressed rapidly. At present, high-sensitivity line arrays and operating two-dimensional arrays have been fabricated. Photon-noise-limited performance has been achieved in line arrays, all the noise sources of the device have been identified and modeled, and the results compare favorably with the theoretical values. For background photon flux levels higher than mid-1012photons/sec-cm2, the device performance is practically background limited (BLIP). In the lower background region at 77°K, however, the shot noise associated with the thermally generated dark current limits device sensitivity.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"InSb CID infrared imaging devices\",\"authors\":\"J.C. Kim, W. Davern, D. Colangelo\",\"doi\":\"10.1109/IEDM.1976.189104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of the InSb MIS technology and associated CID imaging arrays has progressed rapidly. At present, high-sensitivity line arrays and operating two-dimensional arrays have been fabricated. Photon-noise-limited performance has been achieved in line arrays, all the noise sources of the device have been identified and modeled, and the results compare favorably with the theoretical values. For background photon flux levels higher than mid-1012photons/sec-cm2, the device performance is practically background limited (BLIP). In the lower background region at 77°K, however, the shot noise associated with the thermally generated dark current limits device sensitivity.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The development of the InSb MIS technology and associated CID imaging arrays has progressed rapidly. At present, high-sensitivity line arrays and operating two-dimensional arrays have been fabricated. Photon-noise-limited performance has been achieved in line arrays, all the noise sources of the device have been identified and modeled, and the results compare favorably with the theoretical values. For background photon flux levels higher than mid-1012photons/sec-cm2, the device performance is practically background limited (BLIP). In the lower background region at 77°K, however, the shot noise associated with the thermally generated dark current limits device sensitivity.
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