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1976 International Electron Devices Meeting最新文献

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The effects of neutral capacitance upon the frequency response of bipolar transistors — Optimum concentration gradient 中性电容对双极晶体管频率响应的影响—最佳浓度梯度
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189057
A. Wang
{"title":"The effects of neutral capacitance upon the frequency response of bipolar transistors — Optimum concentration gradient","authors":"A. Wang","doi":"10.1109/IEDM.1976.189057","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189057","url":null,"abstract":"This report points out the importance of the so-called \"neutral capacitance\" in determining the frequency response of microwave transistors. A simple model of the emitter-base junction capacitance is also presented which leads to the value of optimum concentration gradient for minimum capacitance of the forward-bias junction.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121610827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Schottky I2L technology and its application in a 24×9 sequential access memory Schottky I2L技术及其在24×9顺序存取存储器中的应用
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189043
F. Hewlett, W. D. Ryden
{"title":"The Schottky I2L technology and its application in a 24&#215;9 sequential access memory","authors":"F. Hewlett, W. D. Ryden","doi":"10.1109/IEDM.1976.189043","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189043","url":null,"abstract":"The Schottky I<sup>2</sup>L device and a two level metal scheme have been used to fabricate a 24×9 sequential access memory. The T<sup>2</sup>L compatible chip has 1287 Schottky I<sup>2</sup>L gates, operates at 60mA, and requires an area of 13,200 mil<sup>2</sup>. Details of the Schottky I<sup>2</sup>L technology and its application in a 24×9 sequential access memory will be discussed.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132029386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of PPM focused high efficiency space TWTs at millimeter wavelengths PPM聚焦毫米波高效率空间行波管的设计
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189061
W. Harman, J. B. Kennedy, I. Tammaru
{"title":"Design of PPM focused high efficiency space TWTs at millimeter wavelengths","authors":"W. Harman, J. B. Kennedy, I. Tammaru","doi":"10.1109/IEDM.1976.189061","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189061","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133503100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Diode sources for 1.0 to 1.2 µm emission 二极管源1.0至1.2 &#181;m发射
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189000
C. Nuese
{"title":"Diode sources for 1.0 to 1.2 &#181;m emission","authors":"C. Nuese","doi":"10.1109/IEDM.1976.189000","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189000","url":null,"abstract":"The properties of silica fibers that are potentially attractive for fiber-optic systems at wavelengths between about 1.0 and 1.2 µm are considered. The features and deficiencies of semiconductor LEDs and lasers that could be used in this wavelength range are then reviewed and compared. These sources include: Si-compensated LEDs of GaAs and InP; ternary homojunctions of (In,Ga)As, In(As,P), and Ga(As,Sb); \"pseudo\" III-Vs or II-VIs such as CuInSe2and CdSnP2; and heterojunction lasers and LEDs of (In,Ga)As/(In,Ga)P, Ga(As,Sb)/ (Al,Ga)(As,Sb), and (In,Ga)(As,P)/InP.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134481022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Visible CW (AlGa)As heterojunction laser diodes 可见连续波(AlGa)异质结激光二极管
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189001
I. Ladany, H. Kressel
{"title":"Visible CW (AlGa)As heterojunction laser diodes","authors":"I. Ladany, H. Kressel","doi":"10.1109/IEDM.1976.189001","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189001","url":null,"abstract":"Room temperature laser diode operation in (AlGa)As is possible to wavelengths as short as 6900 Å. However, the achievement of CW operation becomes increasingly difficult with decreasing wavelength in the 7000 Å range because of a combination of technological and inherent materials limitations. This paper reports on CW laser diodes to wavelengths as short as 7276 Å, the shortest CW laser diode operation achieved to date with any material at room temperature. The characteristics of heterojunction laser diodes operating in the 7000 Å spectral range are discussed and compared with theory.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115691221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 160mW 65GHz Gunn diode 一个160mW 65GHz的Gunn二极管
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188993
T. Hisatsugu, S. Yamamura, S. Yokogawa, Y. Hirachi, A. Miura, A. Shibatomi
{"title":"A 160mW 65GHz Gunn diode","authors":"T. Hisatsugu, S. Yamamura, S. Yokogawa, Y. Hirachi, A. Miura, A. Shibatomi","doi":"10.1109/IEDM.1976.188993","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188993","url":null,"abstract":"High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl3-N2vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers. The gunn diodes, with a diamond heat sink delivered 220mW cw output power with 3.5% efficiency in the frequencies from 50 GHz to 60 GHz and 160mW with 3% efficiency at 65GHz. The gunn diodes operated at a bulk temperature rise of less than 150°C in a maximum output power operating condition. The AM noise (N/C)SSBof the 65GHz stabilized gunn oscillator was -165/1Hz BW at 1MHz off the carrier.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124198589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Anomalous electrical gate conduction in self-aligned MOS structures 自对准MOS结构中的异常栅导通
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189048
W. E. Ham, S. Eaton
{"title":"Anomalous electrical gate conduction in self-aligned MOS structures","authors":"W. E. Ham, S. Eaton","doi":"10.1109/IEDM.1976.189048","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189048","url":null,"abstract":"A class of dielectric conduction and breakdown which can be dominant in practical MOS devices is described. This mechanism consists of surface conduction along the edge of the thin oxide which separates the gate metal from the underlying silicon. Every type of self-aligning dielectric removal tried including direct cleaving produces an effectively weaker dielectric than existed before the removal. Nearly ideal dielectrics result when the oxide edge is electrically isolated from the conductors. It is suggested that the oxide band structure is significantly altered at local regions near the oxide edge-metal connection. Schottky type conduction is indicated instead of the Fowler-Nordheim type found in bulk oxides.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117331539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gallium antimonide planar tunnel diode 锑化镓平面隧道二极管
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189035
S.D. Kang, W. Ko
{"title":"Gallium antimonide planar tunnel diode","authors":"S.D. Kang, W. Ko","doi":"10.1109/IEDM.1976.189035","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189035","url":null,"abstract":"Novel technology for fabricating gallium antimonide planar tunnel diodes on (III) crystall plane was developed for strain or pressure transducers. Peak current to valley current ratio of eight was obtained routinely and the maximum ratio was about eighteen. The series resistance was between one to five ohms. The fractional peak current change due to the unit strain (gauge factor) was in the range of 180 to 240. The fabrication technology along with the theoretical explanations of the high strain sensitivity is discussed.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116191907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-stable MOSFET reference voltage source 温度稳定的MOSFET参考电压源
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189113
W. Butler, C. Eichelberger
{"title":"Temperature-stable MOSFET reference voltage source","authors":"W. Butler, C. Eichelberger","doi":"10.1109/IEDM.1976.189113","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189113","url":null,"abstract":"Punchthrough operation of a short-channel MOSFET device to obtain a temperature-stable output voltage is described. The MOSFET is operated as a two-terminal device with its gate, source and substrate connected to ground, and a variable current source connected to its drain. When the voltage that is developed at the drain of the device, V<inf>r</inf>, exceeds punchthrough, the sensitivity of V<inf>r</inf>to changes in ambient temperature, T, can be minimized at any chosen temperature, T<inf>c</inf>, by selecting an appropriate current density, J<inf>opt</inf>. For constant J<inf>opt</inf>, a deviation of approximately 10 ppM/°C is predicted for V<inf>r</inf>over the temperature range from 200 to 300°K. Experimentally, deviations as low as 1 ppM/°C have been measured over a 100°C temperature range.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128193588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low noise microwave bipolar transistors fabricated by electron and photon lithography 用电子和光子光刻技术制备低噪声微波双极晶体管
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189019
T. Tsai, L. Yau
{"title":"Low noise microwave bipolar transistors fabricated by electron and photon lithography","authors":"T. Tsai, L. Yau","doi":"10.1109/IEDM.1976.189019","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189019","url":null,"abstract":"A low noise microwave bipolar transistor was designed and fabricated with the aid of the BTL electron beam exposure system (EBES) (1). The transistors have nominal 1 µm emitter stripes and were processed on 2-inch silicon wafers. The alignment of the critical levels which were written on the wafers directly by EBES were within 0.25 µm. A self-aligned submicron buffer base region is inserted between the heavily doped inactive base region and the active base region. This buffer base region alleviated the problem of emitter-base shorts without having to lower the inactive base doping. At 1.7 GHz the noise figure ranges from 1.8 - 1.9 dB and the available gain ranges from 11 - 12 dB. The current gain-bandwidth frequency, fT, is 7 GHz at the optimum collector current.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129666883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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