Diode sources for 1.0 to 1.2 µm emission

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1976.189000

C. Nuese

引用次数: 2

Abstract

The properties of silica fibers that are potentially attractive for fiber-optic systems at wavelengths between about 1.0 and 1.2 µm are considered. The features and deficiencies of semiconductor LEDs and lasers that could be used in this wavelength range are then reviewed and compared. These sources include: Si-compensated LEDs of GaAs and InP; ternary homojunctions of (In,Ga)As, In(As,P), and Ga(As,Sb); "pseudo" III-Vs or II-VIs such as CuInSe2and CdSnP2; and heterojunction lasers and LEDs of (In,Ga)As/(In,Ga)P, Ga(As,Sb)/ (Al,Ga)(As,Sb), and (In,Ga)(As,P)/InP.

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二极管源1.0至1.2 µm发射

考虑了波长在1.0到1.2µm之间的光纤系统中具有潜在吸引力的二氧化硅光纤的特性。然后对半导体led和激光器在该波长范围内的特点和不足进行了回顾和比较。这些光源包括:GaAs和InP的si补偿led;(In,Ga)As、In(As,P)和Ga(As,Sb)的三元同结;“伪”iii - v或ii - v，如cuinse2和CdSnP2;以及(In,Ga)As/(In,Ga)P、Ga(As,Sb)/ (Al,Ga)(As,Sb)和(In,Ga)(As,P)/InP的异质结激光器和led。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1976 International Electron Devices Meeting

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