T. Hisatsugu, S. Yamamura, S. Yokogawa, Y. Hirachi, A. Miura, A. Shibatomi
{"title":"一个160mW 65GHz的Gunn二极管","authors":"T. Hisatsugu, S. Yamamura, S. Yokogawa, Y. Hirachi, A. Miura, A. Shibatomi","doi":"10.1109/IEDM.1976.188993","DOIUrl":null,"url":null,"abstract":"High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl3-N2vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers. The gunn diodes, with a diamond heat sink delivered 220mW cw output power with 3.5% efficiency in the frequencies from 50 GHz to 60 GHz and 160mW with 3% efficiency at 65GHz. The gunn diodes operated at a bulk temperature rise of less than 150°C in a maximum output power operating condition. The AM noise (N/C)SSBof the 65GHz stabilized gunn oscillator was -165/1Hz BW at 1MHz off the carrier.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 160mW 65GHz Gunn diode\",\"authors\":\"T. Hisatsugu, S. Yamamura, S. Yokogawa, Y. Hirachi, A. Miura, A. Shibatomi\",\"doi\":\"10.1109/IEDM.1976.188993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl3-N2vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers. The gunn diodes, with a diamond heat sink delivered 220mW cw output power with 3.5% efficiency in the frequencies from 50 GHz to 60 GHz and 160mW with 3% efficiency at 65GHz. The gunn diodes operated at a bulk temperature rise of less than 150°C in a maximum output power operating condition. The AM noise (N/C)SSBof the 65GHz stabilized gunn oscillator was -165/1Hz BW at 1MHz off the carrier.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.188993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.188993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl3-N2vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers. The gunn diodes, with a diamond heat sink delivered 220mW cw output power with 3.5% efficiency in the frequencies from 50 GHz to 60 GHz and 160mW with 3% efficiency at 65GHz. The gunn diodes operated at a bulk temperature rise of less than 150°C in a maximum output power operating condition. The AM noise (N/C)SSBof the 65GHz stabilized gunn oscillator was -165/1Hz BW at 1MHz off the carrier.
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