The Schottky I2L technology and its application in a 24×9 sequential access memory

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1976.189043

F. Hewlett, W. D. Ryden

引用次数: 4

Abstract

The Schottky I²L device and a two level metal scheme have been used to fabricate a 24×9 sequential access memory. The T²L compatible chip has 1287 Schottky I²L gates, operates at 60mA, and requires an area of 13,200 mil². Details of the Schottky I²L technology and its application in a 24×9 sequential access memory will be discussed.

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Schottky I2L技术及其在24×9顺序存取存储器中的应用

肖特基I2L器件和两级金属方案已被用来制造24×9顺序存取存储器。T2L兼容芯片有1287个肖特基I2L栅极，工作在60mA，需要13200 mil2的面积。将详细讨论肖特基I2L技术及其在24×9顺序存取存储器中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1976 International Electron Devices Meeting

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