{"title":"中性电容对双极晶体管频率响应的影响—最佳浓度梯度","authors":"A. Wang","doi":"10.1109/IEDM.1976.189057","DOIUrl":null,"url":null,"abstract":"This report points out the importance of the so-called \"neutral capacitance\" in determining the frequency response of microwave transistors. A simple model of the emitter-base junction capacitance is also presented which leads to the value of optimum concentration gradient for minimum capacitance of the forward-bias junction.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The effects of neutral capacitance upon the frequency response of bipolar transistors — Optimum concentration gradient\",\"authors\":\"A. Wang\",\"doi\":\"10.1109/IEDM.1976.189057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This report points out the importance of the so-called \\\"neutral capacitance\\\" in determining the frequency response of microwave transistors. A simple model of the emitter-base junction capacitance is also presented which leads to the value of optimum concentration gradient for minimum capacitance of the forward-bias junction.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effects of neutral capacitance upon the frequency response of bipolar transistors — Optimum concentration gradient
This report points out the importance of the so-called "neutral capacitance" in determining the frequency response of microwave transistors. A simple model of the emitter-base junction capacitance is also presented which leads to the value of optimum concentration gradient for minimum capacitance of the forward-bias junction.