{"title":"锑化镓平面隧道二极管","authors":"S.D. Kang, W. Ko","doi":"10.1109/IEDM.1976.189035","DOIUrl":null,"url":null,"abstract":"Novel technology for fabricating gallium antimonide planar tunnel diodes on (III) crystall plane was developed for strain or pressure transducers. Peak current to valley current ratio of eight was obtained routinely and the maximum ratio was about eighteen. The series resistance was between one to five ohms. The fractional peak current change due to the unit strain (gauge factor) was in the range of 180 to 240. The fabrication technology along with the theoretical explanations of the high strain sensitivity is discussed.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gallium antimonide planar tunnel diode\",\"authors\":\"S.D. Kang, W. Ko\",\"doi\":\"10.1109/IEDM.1976.189035\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel technology for fabricating gallium antimonide planar tunnel diodes on (III) crystall plane was developed for strain or pressure transducers. Peak current to valley current ratio of eight was obtained routinely and the maximum ratio was about eighteen. The series resistance was between one to five ohms. The fractional peak current change due to the unit strain (gauge factor) was in the range of 180 to 240. The fabrication technology along with the theoretical explanations of the high strain sensitivity is discussed.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189035\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel technology for fabricating gallium antimonide planar tunnel diodes on (III) crystall plane was developed for strain or pressure transducers. Peak current to valley current ratio of eight was obtained routinely and the maximum ratio was about eighteen. The series resistance was between one to five ohms. The fractional peak current change due to the unit strain (gauge factor) was in the range of 180 to 240. The fabrication technology along with the theoretical explanations of the high strain sensitivity is discussed.
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