{"title":"p-n Junctions in vacuum deposited polycrystalline silicon thin films","authors":"H. Charles, C. Feldman, F. Satkiewicz","doi":"10.1109/IEDM.1976.188988","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188988","url":null,"abstract":"Diffused p-n junctions formed in vacuum deposited polycrystalline silicon films on sapphire substrates were examined as functions of both diffusion and deposition conditions. Thick films (5-33 µm) with large crystallites suitable for solar cell and large area device applications are described. Comparisons are made between amorphous silicon films converted to polycrystalline during diffusion processing and films deposited in polycrystalline form on hot substrates. Standard integrated-circuit boron and phosphorus diffusion techniques, oxidation, and masking were used throughout the study. Sample purity, diffusion profiles, and junction depths were determined by SIMS. The study shows that junction depth can be controlled within polycrystalline silicon films. Samples with different crystallite size (determined by SEM) were formed at different substrate temperatures. Resistivity, current voltage characteristics, and photovoltaic response are discussed in terms of film parameters and device geometry.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115024537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Pommerrenig, M. Kinoshita, A. Mantzouranis, T. Oishi
{"title":"Epitaxial heterojunction InAs1-xSbxphotodiodes","authors":"D. Pommerrenig, M. Kinoshita, A. Mantzouranis, T. Oishi","doi":"10.1109/IEDM.1976.189103","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189103","url":null,"abstract":"Heterojunction p-InAs.95Sb.05/n-InSb photodiodes have been fabricated using gas phase epitaxially grown material. The major differences between the performance of homojunction InSb and these devices will be discussed. It will be shown that detectors produced from this epitaxial material exhibit background-limited performance, excellent uniformity and enhanced blue response. Characteristics such as detectivity, responsivity, dynamic range and noise figures will be presented. Applications of these detectors in infrared optical systems will be pointed out.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120911855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electron gun with bonded nonintercepting control grid","authors":"G. Miram, E. Lien","doi":"10.1109/IEDM.1976.189129","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189129","url":null,"abstract":"The bonded grid consists of a metal-insulator-metal sandwich attached directly to an impregnated tungsten cathode. The metallic top surface of the grid structure is the control grid, and the metallic surface on the bottom provides a diffusion barrier for barium between the cathode and the insulator. The major advantage of this design approach is that the close tolerance required in grid cathode spacings is easily obtained and maintained with the cathode in hot condition. The first bonded grid structure described in the paper was developed for a microwave triode having a grid-to-cathode spacing of 2 mils. The dimensions of the grid cells are 5 × 35 mils. The grid structure consists of a thin wafer of anisotropic boron nitride insulator metallized on both sides by RF sputtering. The fabrication techniques were later extended to construction of convergent guns for linear-beam tubes. The progress and the problem areas experienced in both phases of this program are discussed.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"26 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116290678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"S-band 300kW T.W.T.","authors":"P. A. Davis","doi":"10.1109/IEDM.1976.189031","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189031","url":null,"abstract":"This paper describes the development of a high power, grid pulsed T.W.T. being developed for a mobile radar system requiring high efficiency, minimum size and weight. The T.W.T. uses a single section cloverleaf r.f. structure giving good pushing and linearity performance for pulse compression systems and is novel in having a compact P.P.M. focussing system incorporated in the structure. It will be capable of a minimum peak power of 300kW and saturated gain of 20dB in a 9% 1 dB bandwidth. Efficiency should be at least 45% mid-band using collector depression and a frequency dependent velocity taper. The first tubes produced over 300kW with 90% beam transmission when 40% collector depression was used.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122409207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reproducible submicron gate fabrication of GaAs FET by plasma etching","authors":"S. Takahashi, F. Murai, S. Asai, H. Kodera","doi":"10.1109/IEDM.1976.189022","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189022","url":null,"abstract":"Dry etching is employed in the direct fabrication of the main part of semiconductor devices. A submicron Schottky barrier gate is constructed for GaAs FET's. The gate is composed of double layer metallization. The Au top layer is first delineated by ion milling and the Mo layer in contact with the GaAs substrate is chemically etched in CF4gas plasma. Controlled side etching of the Mo metal produces the submicron gate, leaving a wider top metal of Au. The amount of side etching deviates less than 0.05 µm and the gate length is reduced to 0.1 µm. No appreciable damage to the GaAs substrate is found. Electron mobility is not substantially degraded during the prolonged plasma etching time. The forward I-V relation of the Schottky barrier approximates the ideal characteristics. Half micron gate GaAs FET's fabricated by dry etching achieve high gain and low noise performance in the X-band.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122833196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Two-dimensional finite element modeling of NPN devices","authors":"G. Hachtel, M. Mack, R. R. O'Brien, H. F. Quinn","doi":"10.1109/IEDM.1976.189010","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189010","url":null,"abstract":"Our program for semiconductor analysis by finite elements has previously been applied to the analysis of IGFET devices. In this paper we describe the application of an experimental program to a state-of-the-art bipolar transistor in inverse active mode. We compute the hole and electron current distributions across the collector-base junction at low forward biases (the base-emitter junction is shorted). Our results show that (a) the injected hole current (from base to collector) is nearly uniform, and (b) the injected electron current (from collector to base) is greatest under the emitter, decreases under the oxide contact, and rises under the base contact. We conclude with a description of a novel method for solving the difficult problem of maintaining current conservation which is valid for finite elements of arbitrary approximation order. This new method employs Gummel's integral formula for the currents, but avoids the nonphysical \"gaps\" in current flow.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Monolithic microwave GaAs mixer diodes","authors":"E. Wood, A. Immorlica","doi":"10.1109/IEDM.1976.188992","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188992","url":null,"abstract":"A monolithic planar beam leaded GaAs mixer diode has been produced by using proton bombardment and a self-aligned metalization technique. Shadow masking of both the proton bombardment beam and the Schottky barrier metalization is used to produce an extremely tight and reproducible device geometry requiring only routine photoresist alignment. Isothermal annealing data has shown that for times in excess of 10,000 hours at normal storage temperatures, the isolation achieved by proton bombardment is not adversely affected. Diodes with a series resistance under 3.0 ohms with a zero bias junction capacitance of 0.06 pF have been realized, giving a zero bias cutoff frequency of 850 GHz. Preliminary RF data on typical devices yield a noise figure of 5.8 dB and a conversion loss of 3.8 at 10.7 GHz.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"359 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121974368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"GaAs1-xSbx1.06µm avalanche photodiodes","authors":"F. Scholl, K. Nakano, R. C. Eden","doi":"10.1109/IEDM.1976.189073","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189073","url":null,"abstract":"Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs1-xSbxmaterial grown by LPE on GaAs substrates. Multiple layer step graded structures are used to reduce stress in the active layers. A self-terminated depletion region design has been found to give significant improvement in gain uniformity.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117236614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design optimization of silicon solar cells for concentrated-sunlight, high-temperature applications","authors":"J. Fossum, D. Schueler","doi":"10.1109/IEDM.1976.189081","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189081","url":null,"abstract":"This paper describes the utilization of a proven device analysis computer code in the design optimization of silicon solar cells for use in concentrated-sunlight (50-100 suns), high-temperature (less than or approximately equal to 100/sup 0/C) environments. The code provides detailed one-dimensional numerical solutions of carrier transport in the cell and greatly facilitates the identification of design modifications to effect performance improvement. In conjunction with these simulations, two-dimensional spreading resistance calculations are used to optimize the top electrode pattern of the cell. Solar cells have been fabricated and experimentally characterized to confirm theoretical predictions.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129392962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization and modeling of simultaneously fabricated DMOS and VMOS transistors","authors":"S. Combs, D. D'Avanzo, R. Dutton","doi":"10.1109/IEDM.1976.189108","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189108","url":null,"abstract":"A process has been designed which allows the simultaneous fabrication of V-groove MOS (VMOS) and double-diffused MOS (DMOS) transistors. The main objective of this work was to characterize and compare the physical and electrical properties of the two MOS devices. Physical parameters of the VMOS transistors were extracted from their vertical impurity profile measured by spreading resistance. The measured channel lengths and peak impurity concentrations were correlated with the gain factor and threshold voltage for several fabrication schedules. Properties of the lateral impurity profile were inferred from a comparison of the electrical characteristics of the VMOS and DMOS devices. In order to accurately model device performance in the saturated region, a one-dimensional solution of Poisson's equation was derived for the region surrounding the channel-substrate junction.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131423241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}