{"title":"硅太阳能电池的设计优化，用于集中阳光，高温应用","authors":"J. Fossum, D. Schueler","doi":"10.1109/IEDM.1976.189081","DOIUrl":null,"url":null,"abstract":"This paper describes the utilization of a proven device analysis computer code in the design optimization of silicon solar cells for use in concentrated-sunlight (50-100 suns), high-temperature (less than or approximately equal to 100/sup 0/C) environments. The code provides detailed one-dimensional numerical solutions of carrier transport in the cell and greatly facilitates the identification of design modifications to effect performance improvement. In conjunction with these simulations, two-dimensional spreading resistance calculations are used to optimize the top electrode pattern of the cell. Solar cells have been fabricated and experimentally characterized to confirm theoretical predictions.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design optimization of silicon solar cells for concentrated-sunlight, high-temperature applications\",\"authors\":\"J. Fossum, D. Schueler\",\"doi\":\"10.1109/IEDM.1976.189081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the utilization of a proven device analysis computer code in the design optimization of silicon solar cells for use in concentrated-sunlight (50-100 suns), high-temperature (less than or approximately equal to 100/sup 0/C) environments. The code provides detailed one-dimensional numerical solutions of carrier transport in the cell and greatly facilitates the identification of design modifications to effect performance improvement. In conjunction with these simulations, two-dimensional spreading resistance calculations are used to optimize the top electrode pattern of the cell. Solar cells have been fabricated and experimentally characterized to confirm theoretical predictions.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design optimization of silicon solar cells for concentrated-sunlight, high-temperature applications
This paper describes the utilization of a proven device analysis computer code in the design optimization of silicon solar cells for use in concentrated-sunlight (50-100 suns), high-temperature (less than or approximately equal to 100/sup 0/C) environments. The code provides detailed one-dimensional numerical solutions of carrier transport in the cell and greatly facilitates the identification of design modifications to effect performance improvement. In conjunction with these simulations, two-dimensional spreading resistance calculations are used to optimize the top electrode pattern of the cell. Solar cells have been fabricated and experimentally characterized to confirm theoretical predictions.
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