{"title":"GaAs1-xSbx1.06µm雪崩光电二极管","authors":"F. Scholl, K. Nakano, R. C. Eden","doi":"10.1109/IEDM.1976.189073","DOIUrl":null,"url":null,"abstract":"Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs1-xSbxmaterial grown by LPE on GaAs substrates. Multiple layer step graded structures are used to reduce stress in the active layers. A self-terminated depletion region design has been found to give significant improvement in gain uniformity.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs1-xSbx1.06µm avalanche photodiodes\",\"authors\":\"F. Scholl, K. Nakano, R. C. Eden\",\"doi\":\"10.1109/IEDM.1976.189073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs1-xSbxmaterial grown by LPE on GaAs substrates. Multiple layer step graded structures are used to reduce stress in the active layers. A self-terminated depletion region design has been found to give significant improvement in gain uniformity.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189073\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs1-xSbxmaterial grown by LPE on GaAs substrates. Multiple layer step graded structures are used to reduce stress in the active layers. A self-terminated depletion region design has been found to give significant improvement in gain uniformity.
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