Epitaxial heterojunction InAs1-xSbxphotodiodes

Abstract

Heterojunction p-InAs.95Sb.05/n-InSb photodiodes have been fabricated using gas phase epitaxially grown material. The major differences between the performance of homojunction InSb and these devices will be discussed. It will be shown that detectors produced from this epitaxial material exhibit background-limited performance, excellent uniformity and enhanced blue response. Characteristics such as detectivity, responsivity, dynamic range and noise figures will be presented. Applications of these detectors in infrared optical systems will be pointed out.