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1976 International Electron Devices Meeting最新文献

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Ion-implanted Schottky barrier solar cell 离子注入肖特基势垒太阳能电池
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189085
Y. Pai, H. Lin, M. Peckerar, R. Kocher
{"title":"Ion-implanted Schottky barrier solar cell","authors":"Y. Pai, H. Lin, M. Peckerar, R. Kocher","doi":"10.1109/IEDM.1976.189085","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189085","url":null,"abstract":"The effective height of a Schottky barrier solar cell can be increased by implanting a thin layer (∼ 100Å) of impurity of opposite conductivity to that of the substrate. The implanted solar cell becomes insensitive to changes in interfacial oxide, surface state densities and work function. The maximum open circuit voltage thus fabricated was 0.52 V. The short circuit current for this cell was 25 mA cm-2(without interdigitated metallization or antireflection coating). Open circuit voltage is related to the steepness of the implant doping density gradient near the metal-semiconductor interface. Thus, implantation is superior to diffusion doping in that it provides the doping density gradient of maximum steepness. Analysis shows that the range of the implant must be less than 100Å and the dosage greater than 1013cm-2to achieve maximum open circuit voltage.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116399599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature noise-limited pyroelectric detectors 温度噪声限制热释电探测器
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189105
S. Stokowski, N. Byer
{"title":"Temperature noise-limited pyroelectric detectors","authors":"S. Stokowski, N. Byer","doi":"10.1109/IEDM.1976.189105","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189105","url":null,"abstract":"The effects of temperature noise on the performance of pyroelectric detectors have been investigated theoretically and experimentally. The basic theory of temperature noise, techniques for its measurement, and a comparison of it to other noise sources is presented. In LiTaO<inf>3</inf>pyroelectric detectors specially designed to minimize temperature noise, normalized detectivities (D*) of 1.8×10<sup>9</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>or noise equivalent powers (NEP) of 5×10<sup>-11</sup>W Hz<sup>1/2</sup>have been obtained.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122482298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Status of distributed feedback lasers 分布式反馈激光器的现状
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188998
W. Streifer, D. Scifres, R. Burnham
{"title":"Status of distributed feedback lasers","authors":"W. Streifer, D. Scifres, R. Burnham","doi":"10.1109/IEDM.1976.188998","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188998","url":null,"abstract":"Unlike conventional lasers, which employ discrete end reflectors, distributed feedback (DFB) lasers utilize an internal periodic structure to produce feedback. These DFB lasers have several desirable attributes, including wavelength selectivity, longitudinal mode control, temperature stability, and well collimated output beams. They are well suited as sources in integrated optical devices. Following a review of GaAs:GaAlAs DFB and distributed Bragg reflector (DBR) lasers in an historical context, a grating coupled ring laser and a buried heterostructure DFB laser are described in detail.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123749210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TGFB and DTGFB pyroelectric vidicons TGFB和DTGFB热释电显像
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189106
E. Stupp, B. Singer, T. Conklin
{"title":"TGFB and DTGFB pyroelectric vidicons","authors":"E. Stupp, B. Singer, T. Conklin","doi":"10.1109/IEDM.1976.189106","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189106","url":null,"abstract":"New pyroelectric vidicons (PEVs) have been developed employing targets of tri-glycine fluoroberyllate (TGFB) and deuterated triglycine fluoroberyllate (DTGFB). These tubes provide significant advances in the state-of-the-art of PEV performance. The best performance of PEVs previously reported was a panning-mode minimum resolvable temperature (MRT) of 1°C at 250 television lines/picture height (TVL/PH) with a pedestal current of 100 nA for tubes having triglycine sulfate (TGS) targets and non-crossover guns. Under the same conditions, the PEVs with these new target materials show an MRT of approximately 0.5°C at 250 TVL/PH.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130710492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Junction modeling for solar cells—Theory and experiment 太阳能电池的结建模&#8212
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188985
F. Lindholm, A. Neugroschel, C. Sah
{"title":"Junction modeling for solar cells&#8212;Theory and experiment","authors":"F. Lindholm, A. Neugroschel, C. Sah","doi":"10.1109/IEDM.1976.188985","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188985","url":null,"abstract":"This paper describes methods that enable us to experimentally determine the recombination lifetimes in the emitter and base of a p-n-junction solar cell and the energy-gap shrinkage in the emitter for the first time. The methods integrate experiment with theory such that the quantitative analysis of the measurements is rigorously based on the underlying device physics.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133924303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-power, lightweight, PPM-focused coupled-cavity TWTs 高功率、轻量化、聚焦于ppm的耦合腔行波管
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189033
J. Schriever, J. Ruetz
{"title":"High-power, lightweight, PPM-focused coupled-cavity TWTs","authors":"J. Schriever, J. Ruetz","doi":"10.1109/IEDM.1976.189033","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189033","url":null,"abstract":"The achievement of high power with light weight and compact size in Varian's coupled-cavity TWTs is accomplished by using several unique design features not commonly used in other coupled-cavity tube designs. These features include stability and sever designs that allow small magnet sizes, the use of relatively large diameter electron beams reducing the required magnetic focusing fields, and the use of high energy product magnets. The sever designs used also lead to excellent gain and phase ripple performance. Polepiece designs provided with extra thermal conductive capacity and giving low transverse magnetic fields are also used in these tubes. These, and other design features leading to high-average power with good beam focusing, are discussed. Performance data, using the design features discussed, will be presented on several X-band TWTs. Special air-cooling designs for depressed collector operation will also be shown and discussed.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131239578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of tube storage life degradation by means of mass spectrometer analysis 质谱分析方法对管道贮存寿命退化的研究
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189130
H. Gray, G. A. Haas, R.E. Thomas, T. Pankey
{"title":"Study of tube storage life degradation by means of mass spectrometer analysis","authors":"H. Gray, G. A. Haas, R.E. Thomas, T. Pankey","doi":"10.1109/IEDM.1976.189130","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189130","url":null,"abstract":"Electron tubes with small internal volume often fail by arcing when turned on after extended shelf life. We have identified the major failure mechanism in a particular tube type which has an internal volume of 0.1 cm3by using quadrupole mass analysis (QMA) of internal gases and Auger electron spectroscopy (AES) of impurity deposits on internal electrodes. The major failure mechanism is the release of nitrogen from ceramic voids during microcrack propagation. This gas adsorbs on the filament, electrodes, and internal tube surfaces and is released by thermal and electron stimulated desorption when the tube is turned on.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"19 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131521301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of high-voltage switching transistors by a two-dimensional mathematical model 用二维数学模型分析高压开关晶体管
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189008
S. Gaur
{"title":"Analysis of high-voltage switching transistors by a two-dimensional mathematical model","authors":"S. Gaur","doi":"10.1109/IEDM.1976.189008","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189008","url":null,"abstract":"A two-dimensional mathematical model which includes the avalanche multiplication and internal self-heating effects has been used to predict the internal behavior of a typical high-voltage power transistor design. Collector n--n+interface is the region of high electrical and thermal stresses which cause second breakdown failure at high-current and high-voltage operating conditions.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132136893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low dark current photosensors based on GaAs0.6P0.4 基于GaAs0.6P0.4的低暗电流光传感器
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189074
R. Ahrenkiel, F. Moser, T. Coburn, S. Lyu, K. Vaidynathan, P. Chatterjee, W. Mclevige, B. Streetman
{"title":"Low dark current photosensors based on GaAs0.6P0.4","authors":"R. Ahrenkiel, F. Moser, T. Coburn, S. Lyu, K. Vaidynathan, P. Chatterjee, W. Mclevige, B. Streetman","doi":"10.1109/IEDM.1976.189074","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189074","url":null,"abstract":"Photosensors based on n-type GaAsP have been investigated in two types of structures: MOS layers with anodic insulators, and Be-implanted diodes. The MOS sensors show low dark current, long storage times, and response to nearly the entire visible spectrum. These sensors have storage times exceeding 500 seconds and are limited by oxide leakage current. Optically generated holes are collected under the gate and read out by a charge injection technique. Applications to sample and hold detection are discussed. The photodiodes, formed by implanting Be in n-type GaAsP, have high sensitivity, large dynamic range, and a 50 nanosecond rise time at zero bias. They are potentially useful as low light level high speed photodetectors.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131371640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computer aided analysis and design of non-rotationally symmetric electrostatic lens systems 非旋转对称静电透镜系统的计算机辅助分析与设计
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189097
P.J. Shurn
{"title":"Computer aided analysis and design of non-rotationally symmetric electrostatic lens systems","authors":"P.J. Shurn","doi":"10.1109/IEDM.1976.189097","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189097","url":null,"abstract":"Computer software has been developed to analyze an arbitrary electrostatic lens system containing geometric asymmetries such as those produced by tolerance variations and electrode misalignment, and predict the behavior of an electron beam in such a lens system. The method employed separates the type of asymmetry from the magnitude of the asymmetry in a particular lens system, thereby greatly reducing the bulk of calculations. The software produces a graphic display of electron trajectories through the actual symmetric lens system. Additionally, coefficients are calculated which describe electron beam deflection as well as departures from the cardinal lens properties of the ideal rotationally symmetric lens system produced by the geometric asymmetry. This software package allows the designer to determine the effect of tolerance variations and other asymmetries on lens performance, thereby enabling him to determine tolerance criteria for the lens. The types of asymmetries and tolerance variations dealt with are: ellipticity, enlargement, offset and tilting of electrodes with respect to the axis of the lens system. Results predicted by the software have been experimentally verified.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122235027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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