基于GaAs0.6P0.4的低暗电流光传感器

R. Ahrenkiel, F. Moser, T. Coburn, S. Lyu, K. Vaidynathan, P. Chatterjee, W. Mclevige, B. Streetman
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引用次数: 0

摘要

基于n型GaAsP的光传感器研究了两种结构:带阳极绝缘体的MOS层和be注入二极管。MOS传感器具有低暗电流、长存储时间和对几乎整个可见光谱的响应。这些传感器的存储时间超过500秒,并且受到氧化物泄漏电流的限制。光产生的空穴在栅极下收集,并通过电荷注入技术读出。讨论了样品和保持检测的应用。在n型GaAsP中注入Be形成的光电二极管具有高灵敏度、大动态范围和50纳秒零偏置上升时间。它们是潜在的有用的低光水平高速光电探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low dark current photosensors based on GaAs0.6P0.4
Photosensors based on n-type GaAsP have been investigated in two types of structures: MOS layers with anodic insulators, and Be-implanted diodes. The MOS sensors show low dark current, long storage times, and response to nearly the entire visible spectrum. These sensors have storage times exceeding 500 seconds and are limited by oxide leakage current. Optically generated holes are collected under the gate and read out by a charge injection technique. Applications to sample and hold detection are discussed. The photodiodes, formed by implanting Be in n-type GaAsP, have high sensitivity, large dynamic range, and a 50 nanosecond rise time at zero bias. They are potentially useful as low light level high speed photodetectors.
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