{"title":"Automatic registration in an electron-beam exposure system","authors":"D. E. Davis, R. Moore, M. C. Williams, O. Woodard","doi":"10.1109/IEDM.1976.189078","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189078","url":null,"abstract":"In the manufacture of integrated circuits, each succeeding pattern must overlay the preceding ones precisely. After one pattern is exposed, the wafer must be removed from the tool, subjected to a series of processes, and then returned for the next pattern. Mechanical handling tolerances cause errors, which are measured by sensing the location of processed patterns; the next pattern is then exposed with appropriate corrections. This pattern registration has become increasingly complicated, because the large-scale integration of more circuits into the same silicon area reduces pattern detail sizes and overlay tolerances.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126861541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Failure modes and reliability of dynamic RAMS","authors":"C. R. Barrett, R.C. Smith","doi":"10.1109/IEDM.1976.189047","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189047","url":null,"abstract":"The reliability of silicon gate N-channel MOS dynamic RAMS is discussed in terms of the primary failure modes of these devices. Analysis of field data and accelerated lifetest results show the majority of failures to be due to oxide defects with smaller percentages of failures caused by contamination and/or masking defects. Specific attention in the paper is directed to oxide defect failures. The temperature and time dependence of these failures is examined and compared to actual device failure rates. Methods of screening defective oxides in actual RAMS are discussed. It is concluded that the weak temperature dependence of this specific failure mode necessitates over voltage stressing as a prescreen. Accelerated life-tests at high temperature and nominal voltages are relatively ineffective in screening these defects.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"2001 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123756218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Epitaxial silicon n+-p-π-p+avalanche photodiodes for optical fiber communications at 800 to 900 nanometers","authors":"H. Melchior, A. Hartman","doi":"10.1109/IEDM.1976.189070","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189070","url":null,"abstract":"Silicon n+-p-π-p+avalanche photodiodes, having high speed (1 ns response time), low noise and high current gain, have been developed for optical fiber communications. These detectors provide a 16 dB improvement in sensitivity over nonavalanching photodiodes in optical receivers operating at 825 nm and 44.7 Mbit/sec. To facilitate fabrication on large diameter wafers, achieve uniform avalanche gain, and obtain quantum efficiencies greater than 90% at 800 to 850 nm, the avalanche photodiodes are constructed from 50 µm thick, high resistivity epitaxial silicon. At an average gain of 100, their resulting excess noise factor is only 4 to 6 times the shot noise limit. Low dark currents and good reliability are achieved through the use of guard rings, channel stops, bulk and surface gettering, dielectric passivation and surface field plates.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128115234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electro-optic multimode multiplexer","authors":"R. Soref, A. Nelson","doi":"10.1109/IEDM.1976.189025","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189025","url":null,"abstract":"This paper describes the construction and performance of an optical time-division multiplex device that is capable of interleaving two optical bit-streams onto one fiber-optic transmission line, and of separating those signals at the receiving end. The device has four ports that interface with multimode fibers, a single strand of fiber being used for each information channel. To our knowledge, this is the first report of a multimode mux/demux device for fiber optics. The operating principles are similar to those of a prior switch (1), but the present device incorporates several improvements: a shorter interaction length (0.4 cm vs 1.3 cm), a more circular channel cross-section for better fiber-matching, and a higher on/off switching ratio (9.0 dB vs 7.1 dB).","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128137877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"50 Channel optical modulator with integrated CCD addressing","authors":"D. Bartelink, G. Sitts","doi":"10.1109/IEDM.1976.189027","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189027","url":null,"abstract":"A serial-in parallel-out device is described consisting of a CCD with 50 output taps which, through amplifiers, address 50 elastomeric diffraction modulators situated on the Si surface. Each modulator functions as a small portion of a Ruticon device with direct electrical rather than photoconductor/light addressing. The device is capable of accepting a 0.5 MHz serial data stream to modulate an illumination source, a laser in the present case, and produce 50 independently modulated optical channels. Test devices have been configured such that an adjacent series of identical modulators can be addressed separately to check the diffraction efficiency of an individual cell as a function of applied voltage. The 50 on-chip amplifiers each have a maximum output swing of 60 volts or better and are capable of giving high diffraction efficiency.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114064370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Position sensitive photodetectors with high linearity","authors":"L. Lindholm, G. Petersson","doi":"10.1109/IEDM.1976.189069","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189069","url":null,"abstract":"A highly linear position sensitive photodetector (PSD) has been developed to be used in a new measuring system (SELSPOT) for high accuracy non-contacting remote position monitoring of light sources (eg. LEDs). Due to the superior linearity (max non-linearity 0.1%) high sensitivity (0.6 A/W) and extremely high resolution (better than one part in 50 000) the detector opens up new areas of applications in the field of high accuracy measurements.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124100821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"C2L: A new high speed, high density bulk CMOS technology","authors":"A. Dingwall, R. Stricker","doi":"10.1109/IEDM.1976.189015","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189015","url":null,"abstract":"A new structural approach to high speed COS/MOS, C2L, results in significant speed and packing density gains. The CDP 1802, single-chip, 8-bit microprocessor as well as several memory and I/O circuits announced recently by the RCA Solid State Division are fabricated in this new bulk CMOS technology, called C2L or Closed COS/MOS Logic. C2L is a self-aligned silicon gate CMOS technology where the gate completely surrounds the drain. This technique does not require the conventional guardbands of standard Al-gate CMOS and thereby significantly increases packing density as well as device speed, and still retains the inherent advantages of CMOS (very low static power dissipation, high noise immunity and operating voltage from 3 to 15 volts at temperatures ranging from -55°C to 125°C). The basic C2L device structure is presented and compared to standard Al-gate CMOS. The speed advantages of C2L devices are discussed, and data comparing the performance of C2L circuits with comparable standard CMOS devices is presented. Generally, C2L devices show an improvement in packing density by a factor of 3 over standard CMOS and operate at frequencies approximately 4 to 6 times faster than standard CMOS. The fabrication sequence for C2L devices requires 6 photomasks (one less than standard CMOS).","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123449178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The relative performance and merits of CMOS technologies","authors":"A. Aitken, A. MacArthur, R. Abbott, J. Morris","doi":"10.1109/IEDM.1976.189049","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189049","url":null,"abstract":"Comparisons have been made between silicon gate guardbanded CMOS technology, oxide isolated CMOS and CMOS/SOS. The points of comparison include performance, density and flexibility in layout. The reduction in parasitic capacitance and the elimination of parasitic devices in the last two technologies compared with the guard-banded technology does result in significant advantages. However, only marginal performance improvement of the SOS/CMOS over the oxide isolated CMOS technology is predicted due to effects associated with the SOS material and the floating substrate.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130047992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Integrated-optics components: Modulators and deflectors","authors":"E. Conwell","doi":"10.1109/IEDM.1976.189023","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189023","url":null,"abstract":"This paper constitutes a review of the progress made in developing integrated optics (IO) modulators and deflectors. This is now a sizeable group of devices, ranging from IO analogs of bulk Pockels effect and acoustooptic modulators and deflectors, to directional coupler modulators and switches unique to guided wave devices. Although maximum advantage from the use of these components will probably be realized in combination with other guided wave components, i.e., in integrated optics circuits, some will find a place as separate components because of the characteristically low power requirements and small size.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130212503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High efficiency klystron CW amplifier for space power applications","authors":"A. Larue","doi":"10.1109/IEDM.1976.189063","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189063","url":null,"abstract":"This presentation concerns concepts and computer-aided design analyses of a high efficiency klystron cw amplifier for space power applications. It derives from experience with the Varian VKS-7773 50 kW S-band cw klystron amplifier, a 28 kV 2.4 A 50 dB gain tube operating at 2450 MHz with 74.4% efficiency.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121069392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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