The relative performance and merits of CMOS technologies

Abstract

Comparisons have been made between silicon gate guardbanded CMOS technology, oxide isolated CMOS and CMOS/SOS. The points of comparison include performance, density and flexibility in layout. The reduction in parasitic capacitance and the elimination of parasitic devices in the last two technologies compared with the guard-banded technology does result in significant advantages. However, only marginal performance improvement of the SOS/CMOS over the oxide isolated CMOS technology is predicted due to effects associated with the SOS material and the floating substrate.