用于高性能模拟LSI的CMOS工艺

W. Black, R. McCharles, D. Hodges
{"title":"用于高性能模拟LSI的CMOS工艺","authors":"W. Black, R. McCharles, D. Hodges","doi":"10.1109/IEDM.1976.189050","DOIUrl":null,"url":null,"abstract":"A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"CMOS process for high-performance analog LSI\",\"authors\":\"W. Black, R. McCharles, D. Hodges\",\"doi\":\"10.1109/IEDM.1976.189050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189050\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

开发了一种新的CMOS工艺,用于A/D转换器和其他模拟和模拟数字LSI电路。高压CMOS、隔离型垂直NPN晶体管、肖特基势垒二极管和高性能N通道BBD型电荷转移器件都可以用标准的六掩模工艺实现。两个放大器已经制造,一个是完全用CMOS设计的,具有高增益,而另一个使用CMOS和双极器件,以实现中等增益和快速的稳定时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS process for high-performance analog LSI
A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.
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