CMOS process for high-performance analog LSI

Abstract

A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.