1976 International Electron Devices Meeting最新文献_第4页

MOSFETs with polysilicon gates self-aligned to the field isolation and to the source/drain regions 具有多晶硅栅极的mosfet自对准场隔离和源极/漏极区域

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189114

V. L. Rideout, V. Silvestri

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引用次数: 7

Gate assisted turn-off thyristor with cathode shunts and dynamic gate 具有阴极分流和动态栅极的栅极辅助关断可控硅

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189089

E. Schlegel, D. Page

{"title":"Gate assisted turn-off thyristor with cathode shunts and dynamic gate","authors":"E. Schlegel, D. Page","doi":"10.1109/IEDM.1976.189089","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189089","url":null,"abstract":"A 1000V, 200A gate-assisted turn-off thyristor (GATT) is described that was developed for, and is being used in, circuitry for space applications requiring high efficiency and reliability as well as small size and weight. The design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The bypass diode is necessary to permit the combination of both dynamic turn-on and gate-assisted turn-off in the same device. Two versions of this diode are described. The device physics of gate-assisted turn-off will be reviewed. Based on this, improvements in the design will be described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 µsec are obtained. The effect of the gate-assist current on the turn-off time is described. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":" 36","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132039972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

An improved circuit model of the step-recovery diode for computer-aided design 一种用于计算机辅助设计的改进的步进恢复二极管电路模型

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188997

R. Tielert, B. Bosch

引用次数: 2

Metal-oxide devices for rapid high current switching 用于快速大电流开关的金属氧化物器件

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189038

G. Gaule, P. LaPlante, S. Levy, S. Schneider

引用次数: 1

Ultrafast multireflection- and transparent thinfilm silicon photodiodes 超快多反射和透明薄膜硅光电二极管

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189072

J. Muller

引用次数: 5

Improvement of TRAPATT performance with optically generated carriers 利用光生成载流子改进TRAPATT性能

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188994

R. Kiehl, E. P. Eernisse

引用次数: 9

Electrical properties of a-Si solar cells a-Si太阳能电池的电学特性

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188989

C. Wronski, D. Carlson, R. E. Daniel, A. Triano

引用次数: 3

Accurate calculations of the forward drop of power rectifiers and thyristors 精确计算功率整流器和晶闸管的正向压降

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189092

M. Adler, V. Temple

引用次数: 13

Recent Digicon developments 数码icon的最新发展

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189068

J. P. Choisser

引用次数: 1

A new photomask with ion-implanted resist 一种新型离子注入抗蚀剂光掩膜

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189018

T. Hashimoto, T. Koguchi, Y. Okuyama, K. Yamamoto, K. Takahata, M. Kamoshida, T. Yanagawa

引用次数: 1