{"title":"超快多反射和透明薄膜硅光电二极管","authors":"J. Muller","doi":"10.1109/IEDM.1976.189072","DOIUrl":null,"url":null,"abstract":"Thin-silicon-film mesa-shaped pin-photodiodes are presented, which exhibit high internal quantum efficiency at risetimes below 100 ps using a grated highly reflecting back contact and total reflection at the top. Theoretical and typical experimental data are given. Transparent photodiodes fabricated in a similar way are introduced, which can be inserted into an optical transmission path to take out a fraction of power without the need of an optical coupler.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Ultrafast multireflection- and transparent thinfilm silicon photodiodes\",\"authors\":\"J. Muller\",\"doi\":\"10.1109/IEDM.1976.189072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin-silicon-film mesa-shaped pin-photodiodes are presented, which exhibit high internal quantum efficiency at risetimes below 100 ps using a grated highly reflecting back contact and total reflection at the top. Theoretical and typical experimental data are given. Transparent photodiodes fabricated in a similar way are introduced, which can be inserted into an optical transmission path to take out a fraction of power without the need of an optical coupler.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultrafast multireflection- and transparent thinfilm silicon photodiodes
Thin-silicon-film mesa-shaped pin-photodiodes are presented, which exhibit high internal quantum efficiency at risetimes below 100 ps using a grated highly reflecting back contact and total reflection at the top. Theoretical and typical experimental data are given. Transparent photodiodes fabricated in a similar way are introduced, which can be inserted into an optical transmission path to take out a fraction of power without the need of an optical coupler.
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