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1976 International Electron Devices Meeting最新文献

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(Al, Ga)As, GaAs double heterostructure lasers prepared by new liquid phase epitaxial growth technique 新型液相外延生长技术制备(Al, Ga)As, GaAs双异质结构激光器
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.188999
Y. Horikoshi
{"title":"(Al, Ga)As, GaAs double heterostructure lasers prepared by new liquid phase epitaxial growth technique","authors":"Y. Horikoshi","doi":"10.1109/IEDM.1976.188999","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188999","url":null,"abstract":"(Al,Ga)As, GaAs double heterostructure (DH) lasers have received much attention as light sources for optical fiber transmission lines. However, the yield of long life lasers still remain at a quite low level. In order to solve this problem, the author developed a new liquid phase epitaxial growth(LPE) technique characterized by (1) adding GaCl vapor to the growth atmosphere, and (2) using a new boat structure by which multilayer LPE can be carried out without mechanical wipe off of the growth melt. The DH wafer grown by the new LPE technique was quite uniform over whole area (10 × 12 mm2) in the sense that every part of it was suitable for fabrication of long-life lasers. the yield of the lasers which survived through one thousand-hour cw test exceeded fifty percent for specific wafers.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128447835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Single heterostructure tunable diode lasers formed by compositional interdiffusion 成分互扩散形成的单异质结构可调谐二极管激光器
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189002
K. Linden, J. F. Butler, K. Nill
{"title":"Single heterostructure tunable diode lasers formed by compositional interdiffusion","authors":"K. Linden, J. F. Butler, K. Nill","doi":"10.1109/IEDM.1976.189002","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189002","url":null,"abstract":"A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high performance, single heterostructure diode lasers of Pb<inf>1-x</inf>Sn<inf>x</inf>Se and PbS<inf>1-x</inf>Se<inf>x</inf>. These alloy semiconductors cover the infrared region from 3 to 30 µm The improved tunable diode lasers exhibit CW operating temperatures as high as 130K with bias currents limited to 2 Amps. Using temperature variation single lasers have been tuned as much as 400 cm<sup>-1</sup>, with some lasers having been tuned over the entire 9-12 µm atmospheric window region. Single-ended, CW power outputs as high as 38 mW at a bias current of 2 Amps have been observed from PbS<inf>1-x</inf>Se<inf>x</inf>lasers fabricated by the new technique. It is shown that the CID effect should occur in other Pb-salt type alloy semiconductors as well.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129043939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modulation characteristics of cw laser diodes 连续波激光二极管的调制特性
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189003
T. Paoli
{"title":"Modulation characteristics of cw laser diodes","authors":"T. Paoli","doi":"10.1109/IEDM.1976.189003","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189003","url":null,"abstract":"Lightwave communication systems employing junction lasers as sources are currently being evaluated in realistic field environments around the World. In many respects, a laser diode is an ideal source for these systems since it emits adequate power for economical fiberguide transmission and is compatible with fibers integrated optics, and integrated circuits, efficient in its conversion of electrical to optical power, mechanically rugged, potentially reliable, and easily modulated in a variety of ways. This paper reviews the modulation characteristics of contemporary cw junction lasers with a view to identifying current limitations on their performance. We focus on the (AlGa)As double-hereto-structure (DH) diode fabricated in a stripe-geometry since this device is the most developed for fiberguide systems.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123894625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Computer aided design of microwave tubes 微波管的计算机辅助设计
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189094
J. Vaughan
{"title":"Computer aided design of microwave tubes","authors":"J. Vaughan","doi":"10.1109/IEDM.1976.189094","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189094","url":null,"abstract":"The application of computers to the design of microwave tubes is discussed under four headings: 1) What do you intend to achieve? 2) What equipment or services do you need? 3) How should you use the equipment? 4) What can you really expect to get from it? The objectives include warning about danger points as well as simply designing to meet the specifications with minimum cut-and try. The relative merits of in-house and time-sharing computers are considered. The author favors time-sharing for its flexibility, but costs vary widely. It is recommended that computers be used directly by engineers, without intervening computer staff wherever possible. Examples are given of the way that computers can help develop understanding, as well as giving numerical results.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128008986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resolution of electro-optic spatial phase modulators: Measurement techniques 电光空间相位调制器的分辨率:测量技术
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189026
C. Warde, J. Sheppard
{"title":"Resolution of electro-optic spatial phase modulators: Measurement techniques","authors":"C. Warde, J. Sheppard","doi":"10.1109/IEDM.1976.189026","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189026","url":null,"abstract":"A method is proposed for characterizing the spatial phase resolution of electro-optic materials. The resolution of these materials is an important factor in determining whether or not they are useful for making spatial phase modulators. The technique is based on a skewed Michelson or Mach-Zehnder interferometer which converts the phase measurement into a distance measurement. A simple device is constructed from a crystal of lithium niobate and the material resolution is measured. Experimental and theoretical results for the induced phase retardation and the components of the internal electric field, compare favorably.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Minimization of parasitic capacitances in VMOS transistors VMOS晶体管中寄生电容的最小化
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189107
I. S. Bhatti, T. Rodgers, J. Edwards
{"title":"Minimization of parasitic capacitances in VMOS transistors","authors":"I. S. Bhatti, T. Rodgers, J. Edwards","doi":"10.1109/IEDM.1976.189107","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189107","url":null,"abstract":"Process techniques for the reduction of parasitic capacitances in VMOS transistors (1) have been developed. Significant reductions in gate to drain overlap capacitance and side wall component of the junction capacitance have been achieved for a high performance VMOS process.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114900907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Trends and outlooks for the semiconductor industry 半导体产业的趋势与展望
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189041
W. Sanders
{"title":"Trends and outlooks for the semiconductor industry","authors":"W. Sanders","doi":"10.1109/IEDM.1976.189041","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189041","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121625707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The fabrication of and performance of L.E.D.'s and detectors from the Ga/In/As alloy system led的制造与性能来自Ga/In/As合金系统的探测器
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189124
A. Mabbitt, K. Ahmad
{"title":"The fabrication of and performance of L.E.D.'s and detectors from the Ga/In/As alloy system","authors":"A. Mabbitt, K. Ahmad","doi":"10.1109/IEDM.1976.189124","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189124","url":null,"abstract":"The preparation and performance of GaAs and GaInAs 1.06µm LEDs and 1.15µm detectors is described. In each case the basic device material is prepared by a vapour phase hydride growth process and p-n junctions are grown-in during epitaxy by switching dopant sources during growth. LED 'p' type doping levels in the 8 × 1018- 4 × 1019holes/ cc range are used to assess the trade off of device speed and radiance with carrier density. These results are given and so demonstrate the possibility of fabricating LEDs with 3dB modulation bandwidths exceeding 500 MHz. Life test data on these LEDs is also reported. Detectors with quantum efficiency of 80% at 1.15 microns and RC limited rise times of 5 nsec are obtained and their I-V characteristics given.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121695594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation of semiconductor devices by ionized-cluster beam deposition and epitaxy 用电离簇束沉积和外延制备半导体器件
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189117
T. Takagi, I. Yamada, A. Sasaki
{"title":"Preparation of semiconductor devices by ionized-cluster beam deposition and epitaxy","authors":"T. Takagi, I. Yamada, A. Sasaki","doi":"10.1109/IEDM.1976.189117","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189117","url":null,"abstract":"It is shown that the ionized-cluster beam deposition and epitaxial techniques are useful for the semiconductor device fabrications. In this technique, the vapour, on emerging from the nozzle, is partially condensed into clusters with the Van der Waals force. The clusters are then ionized by electron bombardment and accelerated onto the substrate. The deposited film shows good adhesion, good conductive even in a very thin film, and good crystalline state. These techniques are applied to ohmic contact, interconnection, and semiconductor material preparation for devices and ICs.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121515744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrical and optical properties of tin oxide-gallium arsenide heterojunctions 氧化锡-砷化镓异质结的电学和光学性质
1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1976.189082
B. J. Baliga, S. Ghandhi, J. Borrego
{"title":"Electrical and optical properties of tin oxide-gallium arsenide heterojunctions","authors":"B. J. Baliga, S. Ghandhi, J. Borrego","doi":"10.1109/IEDM.1976.189082","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189082","url":null,"abstract":"This paper describes the electrical and optical properties of tin oxide-gallium arsenide heterojunctions. These structures, comprising a highly conducting, wide gap semiconductor in contact with a lightly doped, narrower gap semiconductor substrate, have promise for photovoltaic applications. Epitaxial layers of gallium arsenide were grown by the reaction of trimethylgallium and arsine. These were covered with tin oxide, which was formed by the oxidation of tetramethyltin. All processing is described for eliminating photo-suppression effects in these structures. The photo-response and the electrical characteristics of the cells are also described.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131409267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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