The fabrication of and performance of L.E.D.'s and detectors from the Ga/In/As alloy system

Abstract

The preparation and performance of GaAs and GaInAs 1.06µm LEDs and 1.15µm detectors is described. In each case the basic device material is prepared by a vapour phase hydride growth process and p-n junctions are grown-in during epitaxy by switching dopant sources during growth. LED 'p' type doping levels in the 8 × 1018- 4 × 1019holes/ cc range are used to assess the trade off of device speed and radiance with carrier density. These results are given and so demonstrate the possibility of fabricating LEDs with 3dB modulation bandwidths exceeding 500 MHz. Life test data on these LEDs is also reported. Detectors with quantum efficiency of 80% at 1.15 microns and RC limited rise times of 5 nsec are obtained and their I-V characteristics given.