{"title":"Single heterostructure tunable diode lasers formed by compositional interdiffusion","authors":"K. Linden, J. F. Butler, K. Nill","doi":"10.1109/IEDM.1976.189002","DOIUrl":null,"url":null,"abstract":"A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high performance, single heterostructure diode lasers of Pb<inf>1-x</inf>Sn<inf>x</inf>Se and PbS<inf>1-x</inf>Se<inf>x</inf>. These alloy semiconductors cover the infrared region from 3 to 30 µm The improved tunable diode lasers exhibit CW operating temperatures as high as 130K with bias currents limited to 2 Amps. Using temperature variation single lasers have been tuned as much as 400 cm<sup>-1</sup>, with some lasers having been tuned over the entire 9-12 µm atmospheric window region. Single-ended, CW power outputs as high as 38 mW at a bias current of 2 Amps have been observed from PbS<inf>1-x</inf>Se<inf>x</inf>lasers fabricated by the new technique. It is shown that the CID effect should occur in other Pb-salt type alloy semiconductors as well.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high performance, single heterostructure diode lasers of Pb1-xSnxSe and PbS1-xSex. These alloy semiconductors cover the infrared region from 3 to 30 µm The improved tunable diode lasers exhibit CW operating temperatures as high as 130K with bias currents limited to 2 Amps. Using temperature variation single lasers have been tuned as much as 400 cm-1, with some lasers having been tuned over the entire 9-12 µm atmospheric window region. Single-ended, CW power outputs as high as 38 mW at a bias current of 2 Amps have been observed from PbS1-xSexlasers fabricated by the new technique. It is shown that the CID effect should occur in other Pb-salt type alloy semiconductors as well.
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