Preparation of semiconductor devices by ionized-cluster beam deposition and epitaxy

Abstract

It is shown that the ionized-cluster beam deposition and epitaxial techniques are useful for the semiconductor device fabrications. In this technique, the vapour, on emerging from the nozzle, is partially condensed into clusters with the Van der Waals force. The clusters are then ionized by electron bombardment and accelerated onto the substrate. The deposited film shows good adhesion, good conductive even in a very thin film, and good crystalline state. These techniques are applied to ohmic contact, interconnection, and semiconductor material preparation for devices and ICs.