{"title":"Investigation of the sapphire-silicon interface by transient current analysis","authors":"K. Lehovec, R. Miller","doi":"10.1109/IEDM.1976.189039","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189039","url":null,"abstract":"Transient currents caused by an abrupt switch of the bias voltage applied to an MOS-capacitor on sapphire substrate are measured and analysed to obtain information on the Shockley-Read-Hall centers involved in the inversion charge build-up.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131136782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A high-throughput scanning-electron-beam lithography system, EL1, for semiconductor manufacture: General description","authors":"H. Yourke, E. V. Weber","doi":"10.1109/IEDM.1976.189075","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189075","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134571832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The utilization of charge pumping techniques to evaluate the energy and spatial distribution of interface states of an MOS transistor","authors":"W. Backensto, C. Viswanathan","doi":"10.1109/IEDM.1976.189040","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189040","url":null,"abstract":"The determination of both the energy and spatial distribution of interface states of an MOS transistor utilizing charge pumping measurements is described. In order to obtain an Nssenergy profile, charge pumping measurements must be made at several temperatures. The energy profile obtained shows several maxima and minima, but a gradual increase in magnitude as the band edge is approached. The measured energy dependence of Nssshows good correlation with 1/f noise measurements, shows overlap of Nssvalues obtained at different temperatures and shows good correlation between measured Qssvalues and those values calculated from the measured Nssprofile. The spatial distribution of interface states is determined by measuring the frequency dependence of the charge pumping current. The devices tested showed an exponentially decreasing interface state density away from the surface. Information is also obtained on capture cross-sections from the frequency dependence of the charge pumping current. Capture cross-sections are shown to decrease in value from approximately 10-17cm2at 300°K to approximately 10-22cm2at 77°K.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134608284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Matrix display using a twisted nematic liquid crystal dynamically addressed","authors":"M. Gościański, J. Donjon","doi":"10.1109/IEDM.1976.189123","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189123","url":null,"abstract":"The scanning limitations of rms responding liquid crystal devices due to the lack of sharpness of the transmittance characteristic can be overcome in the case of the twisted nematic configuration. Indeed, it is possible to obtain a linear output polarization from an electrically excited cell, and then to decrease the transmittance level of the non selected dots without altering the optical efficiency for the selected dots by rotating the output polarizer perpendicularly to the transmitted vibration. A 64 × 64 element matrix display using a biphenyl compound has been constructed and operated in the transmissive mode. The contrast ratio obtained with a duty factor equal to 1/128 corresponding to a 128 line display is 20 : 1. The address and the information pulses respectively applied to the lines and the columns are V1= 12.4 V and V2= ± 1.1 V.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130933259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Up-diffused I2L, a high speed bipolar LSI process","authors":"D. McGreivy, B. B. Roesner","doi":"10.1109/IEDM.1976.189044","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189044","url":null,"abstract":"I2L (Integrated Injection Logic) or MTL (Merged Transistor Logic) is generally considered a low power, medium speed logic technology with high packing density. The standard double diffused structures presently used cannot yield the high speeds necessary for many circuits. However, improvements in the NPN transistor doping profile by \"up-diffusing\" a buried layer P base during N epi growth have greatly increased the speed of I2L circuits. Also, fan out and drive capabilities are improved since transistors fabricated with this process yield betas of over 200 and breakdown voltages of 7 to 10 volts. This compares to standard I2L transistors with betas of 10 and breakdown voltages of 4 volts. Further advantages of the up-diffused I2L are the ease with which Schottky diodes (both for isolation and collector base clamps) and oxide isolation can be incorporated. Junction isolated devices with standard 5 micron geometries yield minimum gate delays of 2.4 nsecs and typical minimum power-delay products of under 0.2 pJ.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"395 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130939242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A junction isolation technology for integrating silicon controlled rectifiers in crosspoint switching circuits","authors":"A. Hartman, P. Shackle, R. L. Pritchett","doi":"10.1109/IEDM.1976.188984","DOIUrl":"https://doi.org/10.1109/IEDM.1976.188984","url":null,"abstract":"An integrated circuit technology has been developed to fabricate a matrix array of 32 junction isolated Silicon Controlled Rectifiers (SCR) for telephone switching systems. Other integrated SCR arrays have employed the more complicated dielectric or air isolation technologies to eliminate parasitic substrate leakages. This leakage in junction isolated structures results from the collection of minority carriers by the substrate. Our technology employs a vertical pnpn structure similar to collector diffusion isolation (1) with a p-substrate, n+buried layer, p-epitaxy, wrap around n+isolation diffusion, implanted n-gate and diffused p+anode regions. Through the use of gold recombination centers for carrier lifetime reduction, the structure achieves substrate leakages of less than one part in 105. The SCRs also have adequately low leakages of typically 10 nA at 30V forward or reverse.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134306846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Recent advances with high-power PPM-focused dual mode TWT's","authors":"C. Jones, J. R. Hechtel","doi":"10.1109/IEDM.1976.189099","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189099","url":null,"abstract":"The objectives of this development were to improve the average power capability, gain and efficiency of a predecessor PPM-focused dual mode TWT described in 1975(1). The circuit for the new tube is also of the coupled-cavity type with a center frequency of 9.5 GHz. The new circuit is liquid cooled and provides 500 watts average output power in the high mode with 11 kW peak power and 54 dB gain. In the low mode the average output power is 700 watts with 1.4 kW peak power stud 29 dB gain. The basic efficiency without collector depression is 15 percent in the high mode and 8 percent in the low mode. Overall efficiencies increase to 36 percent and 24 percent in high and low modes with a two-stage collector depressed to 60 and 80 percent of cathode voltage. The collector designed for this tube employs a novel arrangement of collinear hyperbolic elements, displaced to one side of the tube axis. Allowing for beam interception stud rf circuit losses, the implied collector efficiencies range from 75 to 83 percent.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133574576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electro-optical processing of signals and images using CCDs","authors":"D. Roy, M. Copeland","doi":"10.1109/IEDM.1976.189028","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189028","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132962883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Barnoski, M. D. Rourke, S. Jensen, H. R. Friedrich
{"title":"Coupling components for single optical fibers","authors":"M. Barnoski, M. D. Rourke, S. Jensen, H. R. Friedrich","doi":"10.1109/IEDM.1976.189024","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189024","url":null,"abstract":"","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133337624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Laser vaporization of metal films — Effect of optical interference in underlying dielectric layers","authors":"J. North","doi":"10.1109/IEDM.1976.189119","DOIUrl":"https://doi.org/10.1109/IEDM.1976.189119","url":null,"abstract":"The interference of incident laser light with light reflected from dielectric interfaces is important in the completeness with which a laser beam vaporizes thin metal films, even though the dielectric layers lie underneath the metal film being vaporized. A structure consisting of titanium-platinum links on a two level dielectric consisting of silicon nitride and silicon dioxide on a silicon substrate was used to demonstrate the effect. The resistance of laser vaporized titanium-platinum links varied by more than seven orders of magnitude as the thickness of the silicon dioxide, the lower dielectric, was varied. The thicknesses of underlying dielectric layers are, therefore, parameters which must be taken into account when using a laser beam to produce high resistance open circuits in metal films.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129362904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}