Schottky diode magnetic sensor of high sensitiveness

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1976.189036

G. Kamarinos, P. Viktorovitch

引用次数: 1

Abstract

A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.

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高灵敏度肖特基二极管磁传感器

描述了一种基于两种效应组合的磁敏器件:i)磁浓缩效应，ii)肖特基二极管的反向饱和电流对载流子密度过剩的灵敏度。该器件在锗板上制作，灵敏度为dV/dB = 25 mV/Gauss[或dV/IdB = 25 V/Gauss a]。这种灵敏度比霍尔传感器高200倍，比一般的磁二极管大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1976 International Electron Devices Meeting

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