{"title":"高灵敏度肖特基二极管磁传感器","authors":"G. Kamarinos, P. Viktorovitch","doi":"10.1109/IEDM.1976.189036","DOIUrl":null,"url":null,"abstract":"A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Schottky diode magnetic sensor of high sensitiveness\",\"authors\":\"G. Kamarinos, P. Viktorovitch\",\"doi\":\"10.1109/IEDM.1976.189036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Schottky diode magnetic sensor of high sensitiveness
A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.
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