{"title":"2-5微米(Hg, Cd)Te光电二极管的研究进展","authors":"T. Tredwell","doi":"10.1109/IEDM.1976.189102","DOIUrl":null,"url":null,"abstract":"Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 300K and D* = 5.0 × 10<sup>12</sup>cm Hz<sup>1/2</sup>/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 10<sup>12</sup>Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10<sup>-8</sup>sec. 2.7µm photodiodes achieve D*<inf>λ</inf>= 1.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 300K and D*<inf>λ</inf>= 5.0 × 10<sup>11</sup>cm Hz<sup>1/2</sup>/W at 193K. 4.8µm photodiodes achieve D*<inf>λ</inf>= 8.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 170K and 2.0 × 10<sup>12</sup>cm Hz<sup>1/2</sup>/W at 77K and zero background. This paper will present these recent data and compare them with theory.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Advances in 2-5 micrometer (Hg, Cd)Te photodiodes\",\"authors\":\"T. Tredwell\",\"doi\":\"10.1109/IEDM.1976.189102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 300K and D* = 5.0 × 10<sup>12</sup>cm Hz<sup>1/2</sup>/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 10<sup>12</sup>Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10<sup>-8</sup>sec. 2.7µm photodiodes achieve D*<inf>λ</inf>= 1.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 300K and D*<inf>λ</inf>= 5.0 × 10<sup>11</sup>cm Hz<sup>1/2</sup>/W at 193K. 4.8µm photodiodes achieve D*<inf>λ</inf>= 8.0 × 10<sup>10</sup>cm Hz<sup>1/2</sup>/W at 170K and 2.0 × 10<sup>12</sup>cm Hz<sup>1/2</sup>/W at 77K and zero background. This paper will present these recent data and compare them with theory.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 1010cm Hz1/2/W at 300K and D* = 5.0 × 1012cm Hz1/2/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 1012Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10-8sec. 2.7µm photodiodes achieve D*λ= 1.0 × 1010cm Hz1/2/W at 300K and D*λ= 5.0 × 1011cm Hz1/2/W at 193K. 4.8µm photodiodes achieve D*λ= 8.0 × 1010cm Hz1/2/W at 170K and 2.0 × 1012cm Hz1/2/W at 77K and zero background. This paper will present these recent data and compare them with theory.
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