{"title":"离子注入si - sio2结构的表面表征","authors":"P. V. Gray, K. Wang","doi":"10.1109/IEDM.1976.189052","DOIUrl":null,"url":null,"abstract":"This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface characterization of ion-implanted Si-SiO2structures\",\"authors\":\"P. V. Gray, K. Wang\",\"doi\":\"10.1109/IEDM.1976.189052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189052\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface characterization of ion-implanted Si-SiO2structures
This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.
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