{"title":"I2L的物理学和模型","authors":"F. Klaassen","doi":"10.1109/IEDM.1976.189042","DOIUrl":null,"url":null,"abstract":"Device physics for modelling an I<sup>2</sup>L gate is discussed. The closest possible relation of the device properties to technology, design and measuring practice has been sought. A standard I<sup>2</sup>L gate and other versions like oxide-isolated I<sup>2</sup>L, SFL and Schottky-I<sup>2</sup>L are considered.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Physics of and models for I2L\",\"authors\":\"F. Klaassen\",\"doi\":\"10.1109/IEDM.1976.189042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Device physics for modelling an I<sup>2</sup>L gate is discussed. The closest possible relation of the device properties to technology, design and measuring practice has been sought. A standard I<sup>2</sup>L gate and other versions like oxide-isolated I<sup>2</sup>L, SFL and Schottky-I<sup>2</sup>L are considered.\",\"PeriodicalId\":106190,\"journal\":{\"name\":\"1976 International Electron Devices Meeting\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1976.189042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device physics for modelling an I2L gate is discussed. The closest possible relation of the device properties to technology, design and measuring practice has been sought. A standard I2L gate and other versions like oxide-isolated I2L, SFL and Schottky-I2L are considered.
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