Advances in 2-5 micrometer (Hg, Cd)Te photodiodes

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1976.189102

T. Tredwell

{"title":"Advances in 2-5 micrometer (Hg, Cd)Te photodiodes","authors":"T. Tredwell","doi":"10.1109/IEDM.1976.189102","DOIUrl":null,"url":null,"abstract":"Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 1010cm Hz1/2/W at 300K and D* = 5.0 × 1012cm Hz1/2/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 1012Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10-8sec. 2.7µm photodiodes achieve D*<inf>λ</inf>= 1.0 × 1010cm Hz1/2/W at 300K and D*<inf>λ</inf>= 5.0 × 1011cm Hz1/2/W at 193K. 4.8µm photodiodes achieve D*<inf>λ</inf>= 8.0 × 1010cm Hz1/2/W at 170K and 2.0 × 1012cm Hz1/2/W at 77K and zero background. This paper will present these recent data and compare them with theory.","PeriodicalId":106190,"journal":{"name":"1976 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1976.189102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 10¹⁰cm Hz^1/2/W at 300K and D* = 5.0 × 10¹²cm Hz^1/2/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 10¹²Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10^-8sec. 2.7µm photodiodes achieve D*λ= 1.0 × 10¹⁰cm Hz^1/2/W at 300K and D*λ= 5.0 × 10¹¹cm Hz^1/2/W at 193K. 4.8µm photodiodes achieve D*λ= 8.0 × 10¹⁰cm Hz^1/2/W at 170K and 2.0 × 10¹²cm Hz^1/2/W at 77K and zero background. This paper will present these recent data and compare them with theory.

查看原文本刊更多论文

2-5微米(Hg, Cd)Te光电二极管的研究进展

探测2-5微米红外辐射对地球资源和热成像应用都很重要。在本文中，我们提出了2-5µm (Hg, Cd)Te光电二极管阵列的新结果。2.1µm光电二极管在300K时达到D* = 6.0 × 1010cm Hz1/2/W，在193K时达到D* = 5.0 × 1012cm Hz1/2/W。光电二极管的表面漏阻大于1.0 × 1012Ω。该器件显示1/f噪声小于0.1 Hz，信号功率响应线性优于0.5%。阵列显示响应度均匀性在±3%以内。二极管饱和电流受耗尽层发生复合的限制，有效寿命为6.0 × 10-8sec。2.7µm光电二极管在300K时达到D*λ= 1.0 × 1010cm Hz1/2/W，在193K时达到D*λ= 5.0 × 1011cm Hz1/2/W。4.8µm光电二极管在170K时实现D*λ= 8.0 × 1010cm Hz1/2/W，在77K和零背景下实现2.0 × 1012cm Hz1/2/W。本文将介绍这些最新的数据，并与理论进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1976 International Electron Devices Meeting

自引率

0.00%

发文量