2021 IEEE International Interconnect Technology Conference (IITC)最新文献_第9页

Reliability of ultra-porous low-k materials for advanced interconnects 用于先进互连的超多孔低k材料的可靠性

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831873

J. Plawsky, J. Borja, T. Lu, H. Bakhru, R. Rosenberg, W. Gill, T. Shaw, R. Laibowitz, E. Liniger, S. Cohen, G. Bonilla

{"title":"Reliability of ultra-porous low-k materials for advanced interconnects","authors":"J. Plawsky, J. Borja, T. Lu, H. Bakhru, R. Rosenberg, W. Gill, T. Shaw, R. Laibowitz, E. Liniger, S. Cohen, G. Bonilla","doi":"10.1109/IITC.2014.6831873","DOIUrl":"https://doi.org/10.1109/IITC.2014.6831873","url":null,"abstract":"Summary form only given. The reliability of new ultra-porous low-k materials is often a fascinating and complex tale involving multiple concepts from material science, electrical and chemical engineering. Pursuing an understanding of reliability for novel low-k materials requires the dissection of fundamental mechanisms and phenomena altering the electrical and physical properties of the dielectric matrix. Failure mechanisms can be categorized into two main groups. Intrinsic failure arises from damage to the dielectric matrix due to the transport of charge carriers. Ion catalyzed failure results from the drift of ionic species originating from the metal/dielectric interface. Integration of sub-20nm process technology nodes can be radically advanced by resolving how major failure mechanisms coexist and collaborate to generate dielectric failures. Here, we present a set of dynamic applied field experiments designed to identify changes in the conduction and reliability of dielectric films as result of bias and temperature stress (BTS). It is shown that ionic species originating from the metal/dielectric interface can behave as trapping centers for charge carriers under BTS. Trapping of electrons into ionic centers could increase the scattering of charge carriers which leads to the additional formation of intrinsic defects across the dielectric matrix, thus accelerating intrinsic failure. A mechanism is proposed to describe how leakage current decay at the onset of BTS is related to charge carrier confinement into intrinsic and ionic defects. The kinetics of charge trapping events were found to be consistent with a time-dependent reaction rate constant, k = k0 · (t + 1)β-1 where 0<;β<;1. This formulation leads to a classic, stretched exponential decay rate that we are looking to use to help predict dielectric reliability.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"12 1","pages":"217-218"},"PeriodicalIF":0.0,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89384885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of die partitioning on reliability and yield of 3D DRAM 晶片分割对3D DRAM可靠性及良率的影响

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831841

Woongrae Kim, Daehyun Kim, Hee Il Hong, L. Milor, S. Lim

引用次数: 3

Reliability of segmented edge seal ring for RF devices 射频器件分段边缘密封圈的可靠性

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831836

J. Gambino, R. Graf, J. Malinowski, A. Cote, W. Guthrie, K. Watson, P. Chapman, K. K. Sims, M. D. Levy, T. Aoki, G. A. Mason, M. Jaffe

引用次数: 3

Advanced metal and dielectric barrier cap films for Cu low k interconnects 用于Cu低k互连的先进金属和介质阻挡帽膜

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831866

D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah

{"title":"Advanced metal and dielectric barrier cap films for Cu low k interconnects","authors":"D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah","doi":"10.1109/IITC.2014.6831866","DOIUrl":"https://doi.org/10.1109/IITC.2014.6831866","url":null,"abstract":"Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"14 1","pages":"185-188"},"PeriodicalIF":0.0,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84368741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

3D sequential integration opportunities and technology optimization 3D顺序集成机会和技术优化

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831837

P. Batude, B. Sklénard, C. Fenouillet-Béranger, B. Previtali, C. Tabone, O. Rozeau, O. Billoint, O. Turkyilmaz, H. Sarhan, S. Thuries, G. Cibrario, L. Brunet, F. Deprat, J.-E Michallet, F. Clermidy, M. Vinet

引用次数: 43

Through-silicon-via material property variation impact on full-chip reliability and timing 通硅通孔材料性能变化对全芯片可靠性和时序的影响

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831846

Moongon Jung, D. Pan, S. Lim

引用次数: 5

Integration of a 3-D capacitor into a logic interconnect stack for high performance embedded DRAM SoC technology 将3-D电容器集成到逻辑互连堆栈中，用于高性能嵌入式DRAM SoC技术

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831892

R. Brain, N. Bisnik, H.P. Chen, J. Neulinger, N. Lindert, J. Peach, L. Rockford, Y. Wang, K. Zhang

引用次数: 1

Restoration and pore sealing of low-k films by UV-assisted processes 紫外光辅助工艺对低钾薄膜的修复和孔隙密封

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831901

Bo Xie, Kelvin Chan, D. Cui, He Ren, Daemian Raj, E. Hollar, Sanjeev Baluja, J. Rocha, M. Naik, A. Demos

{"title":"Restoration and pore sealing of low-k films by UV-assisted processes","authors":"Bo Xie, Kelvin Chan, D. Cui, He Ren, Daemian Raj, E. Hollar, Sanjeev Baluja, J. Rocha, M. Naik, A. Demos","doi":"10.1109/IITC.2014.6831901","DOIUrl":"https://doi.org/10.1109/IITC.2014.6831901","url":null,"abstract":"Porous low-k dielectrics are susceptible to damages by steps such as etch, ash, and CMP in the BEOL process flow. Such damages degrade the structural and electrical properties of low-k materials. To uphold the value of integrating low-k dielectrics, restoration processes are needed to repair such damages. In this work, UV-assisted silylation is used to repair damages and restore properties of porous low-k dielectrics. The repair process is able to restore carbon content, as indicated by the increase in water contact angle (WCA), and restore the electrical properties, as shown by the decrease in dielectric constant (k) and increase in break-down electrical field based on blanket-film data. On structured wafers, the post-etch repair process effects a 4-6% reduction in RC when compared to without repair. The same UV-assisted platform may be used to effect pore sealing to prevent metals used in BEOL metallization from penetrating into porous low-k materials. On structured wafers, the pore-sealing process is able to reduce Mn penetration into porous low-k when ALD MnN is used as the copper barrier.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"10 1","pages":"335-338"},"PeriodicalIF":0.0,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80807185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Localization length of integrated multi-walled carbon nanotubes 集成多壁碳纳米管的定位长度

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831852

H. Fiedler, S. Hermann, M. Rennau, S. Schulz, T. Gessner

引用次数: 0

Interconnects scaling challenge for sub-20nm spin torque transfer magnetic random access memory technology 亚20nm自旋转矩转移磁随机存取存储器技术的互连缩放挑战

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831830

T. Min, Z. Tokei, G. Kar, S. Coseman, J. Bekaert, P. Raghavan, S. Cornelissen, Kaidong Xu, L. Souriau, D. Radisic, J. Swerts, T. Tahmasebi, S. Mertens

引用次数: 3