Advanced metal and dielectric barrier cap films for Cu low k interconnects

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI:10.1109/IITC.2014.6831866

D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah

{"title":"Advanced metal and dielectric barrier cap films for Cu low k interconnects","authors":"D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah","doi":"10.1109/IITC.2014.6831866","DOIUrl":null,"url":null,"abstract":"Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

Abstract

Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.

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用于Cu低k互连的先进金属和介质阻挡帽膜

针对Cu -低k互连开发了高击穿、低泄漏的多层SiN势垒膜，并与以往技术节点上使用的SiCNH势垒膜进行了比较。超薄的SiN阻挡帽膜也提供了高的一致性，并填补了CMP后观察到的Cu线的凹槽。通过选择性地在Cu线上沉积Co，然后在共形多层SiN势垒膜上沉积Co，可以显著提高电迁移(EM)性能。通过使用Co衬垫形成完全封装Cu的包裹结构，进一步提高了EM寿命。采用集成的原位预清洁/金属/介电帽室来避免Cu/Co层的氧化。化学气相沉积Co衬垫/Co帽样品的动力学研究表明，与仅具有介电阻挡膜的样品(0.9-1 eV)相比，其EM活化能(1.7 eV)显著增加。采用Co衬垫和Co帽的完整缠绕结构，提高了设备的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2021 IEEE International Interconnect Technology Conference (IITC)

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