通硅通孔材料性能变化对全芯片可靠性和时序的影响

Moongon Jung, D. Pan, S. Lim
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引用次数: 5

摘要

我们研究了通硅通孔(TSV)及其周围结构中材料特性的变化对3D集成电路可靠性和性能的影响。我们的重点是热膨胀系数(CTE)和杨氏模量的变化TSV,屏障,和内衬材料。我们的工具集有效地处理单个tsv以及全芯片3D IC设计的建模和分析的复杂性。该工具使3D IC设计人员能够准确地评估和评估各种方法,以容忍机械可靠性和性能变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Through-silicon-via material property variation impact on full-chip reliability and timing
We study the impact of material property variations in through-silicon-via (TSV) and its surrounding structures on the reliability and performance of 3D ICs. We focus on coefficient of thermal expansion (CTE) and Young's modulus variations for TSV, barrier, and liner materials. Our toolset efficiently handles the complexity of modeling and analysis of individual TSVs as well as full-chip 3D IC designs. This tool enables 3D IC designers to accurately assess and evaluate various methods to tolerate mechanical reliability and performance variations.
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